Deposition of polycrystalline silicon films on metal substrates under ultra-high vacuum

Abstract Silicon layers up to 20μm thick have been sublimed from a resistively heated source onto tungsten and nickel substrates at pressures in the 10 -10 Torr (10 -8 Pa) range. Deposition onto tungsten at 500°C yielded Si grains up to 30–50 μm across conforming to those of the W substrate. Si orientation was strongly (110) and the W was (100). Above 600°C, WSi 2 was formed. Below 500°C, the film was less strongly oriented. Deposition onto Ni yielded a silicide or very fine grained layers depending upon the temperature.

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