AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

This paper extends our 650V rated GaN device technology to current ratings in excess of 100A. For the first time, devices with single digit Ron values are reported. A record low value of 6mΩ is measured at 100A. The device technology is shown to be fully current collapse free, over the complete voltage and temperature window. Intrinsic reliability test data up to Vds=900V, and T=200°C is provided. In addition, by using a thicker GaN buffer, 20A rated GaN power devices up to 1.2kV are presented, with leakage current ~100nA. This is a first step to allow AlGaN/GaN power devices to compete with Si IGBTs and SiC MOSFETs.

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