A 62mV 0.13μm CMOS standard-cell-based design technique using schmitt-trigger logic

Sub-threshold circuits have recently gained attention mainly due to the possibility of operating at the minimum energy per operation point [1]. There are applications where a supply voltage reduction below this point is advantageous though, even at the cost of increasing active energy per operation. Always-on circuits, e.g. wake-up circuitry for chips sleeping at ultra-low supply voltages, reduce power consumption with decreasing supply. Furthermore, energy-harvesting applications are often limited by the very low output voltages of the harvesting devices, thus the minimum VDD of the electronic circuits dictates when active operation can start (e.g. thermoelectric harvesters [2]).

[1]  Myeong-Eun Hwang,et al.  A 85mV 40nW Process-Tolerant Subthreshold 8×8 FIR Filter in 130nm Technology , 2007, 2007 IEEE Symposium on VLSI Circuits.

[2]  A.P. Chandrakasan,et al.  A 65 nm Sub-$V_{t}$ Microcontroller With Integrated SRAM and Switched Capacitor DC-DC Converter , 2008, IEEE Journal of Solid-State Circuits.

[3]  K. Roy,et al.  A 160 mV Robust Schmitt Trigger Based Subthreshold SRAM , 2007, IEEE Journal of Solid-State Circuits.

[4]  Anantha Chandrakasan,et al.  A batteryless thermoelectric energy-harvesting interface circuit with 35mV startup voltage , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[5]  A. Chandrakasan,et al.  A 180mV FFT processor using subthreshold circuit techniques , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[6]  Kaushik Roy,et al.  A 135mV 0.13μW process tolerant 6T subthreshold DTMOS SRAM in 90nm technology , 2008, 2008 IEEE Custom Integrated Circuits Conference.

[7]  Bo Zhai,et al.  Exploring Variability and Performance in a Sub-200-mV Processor , 2008, IEEE Journal of Solid-State Circuits.