A Study on Bandgap Reference Circuit With Leakage-Based PTAT Generation

This paper presents detailed analyses on leakage-based bandgap reference (BGR) circuit for ultralow-power applications. Design considerations for power supply rejection ratio and noise characteristics are provided with pole/zero analysis. Startup settling issue is also discussed with measurements. For verification, a test BGR circuit is implemented in a 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS technology. The standard deviation of proportional-to-absolute-temperature (PTAT) voltages measured from 20 chips is 1.15% at 30 °C. The BGR also uses two PTAT voltages to reduce the resistance for complementary-to-absolute-temperature generation, hence alleviating the tradeoff limitation between power consumption and area cost. With an active area of 0.056 mm<sup>2</sup>, the BGR consumes 19 nW at room temperature. Measurements from 20 chips show a standard deviation of 0.54% at 30 °C without any trimming, a temperature dependence of 143 ppm/°C and a line regulation of 2.4%/V.

[1]  David Blaauw,et al.  A Portable 2-Transistor Picowatt Temperature-Compensated Voltage Reference Operating at 0.5 V , 2012, IEEE Journal of Solid-State Circuits.

[2]  David D. Wentzloff,et al.  5.4 A 32nW bandgap reference voltage operational from 0.5V supply for ultra-low power systems , 2015, 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers.

[3]  Fengqi Yu,et al.  A Novel 1.2–V 4.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference , 2014, IEEE Transactions on Circuits and Systems I: Regular Papers.

[4]  K. Sakui,et al.  A CMOS bandgap reference circuit with sub-1-V operation , 1999 .

[5]  Byungsub Kim,et al.  5.8 A 9.3nW all-in-one bandgap voltage and current reference circuit , 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

[6]  Abdollah Khoei,et al.  Reanalyzing the basic bandgap reference voltage circuit considering thermal dependence of bandgap energy , 2014 .

[7]  Kofi A. A. Makinwa,et al.  A single-trim CMOS bandgap reference with a 3σ inaccuracy of ±0.15% from -40°C to 125°C , 2010, ISSCC.

[8]  Anantha Chandrakasan,et al.  Sub-threshold Design for Ultra Low-Power Systems , 2006, Series on Integrated Circuits and Systems.

[9]  Julius Georgiou,et al.  A Novel Wide-Temperature-Range, 3.9 ppm/$^{\circ}$C CMOS Bandgap Reference Circuit , 2012, IEEE Journal of Solid-State Circuits.

[10]  Ralf Brederlow,et al.  An Ultra Low Power Bandgap Operational at Supply From 0.75 V , 2012, IEEE Journal of Solid-State Circuits.

[11]  Zhangming Zhu,et al.  A 58-ppm/°C 40-nW BGR at Supply From 0.5 V for Energy Harvesting IoT Devices , 2017, IEEE Transactions on Circuits and Systems II: Express Briefs.

[12]  R. Jacob Baker,et al.  CMOS Circuit Design, Layout, and Simulation , 1997 .

[13]  Nobutaka Kuroki,et al.  1.2-V Supply, 100-nW, 1.09-V Bandgap and 0.7-V Supply, 52.5-nW, 0.55-V Subbandgap Reference Circuits for Nanowatt CMOS LSIs , 2013, IEEE Journal of Solid-State Circuits.

[14]  Ze-kun Zhou,et al.  A 1.6-V 25-µ A 5-ppm/°C Curvature-Compensated Bandgap Reference , 2012, IEEE Trans. Circuits Syst. I Regul. Pap..

[15]  Byungsub Kim,et al.  A 9.3 nW all-in-one bandgap voltage and current reference circuit using leakage-based PTAT generation and DIBL characteristic , 2018, 2018 23rd Asia and South Pacific Design Automation Conference (ASP-DAC).

[16]  Tor Sverre Lande,et al.  A Sub-$\mu{\rm W}$ Bandgap Reference Circuit With an Inherent Curvature-Compensation Property , 2015, IEEE Transactions on Circuits and Systems I: Regular Papers.

[17]  Gabor C. Temes,et al.  An 11-Bit 250-nW 10-kS/s SAR ADC With Doubled Input Range for Biomedical Applications , 2017, IEEE Transactions on Circuits and Systems I: Regular Papers.