论文信息 - Metallurgical comparison of Au and Au:An:Au contacts on InGaAs, InGaAsP layers - 字舞流文

Metallurgical comparison of Au and Au:An:Au contacts on InGaAs, InGaAsP layers

A. Appelbaum | P. Thomas

[1] Osamu Wada,et al. Thermal reaction of gold metallization on InP , 1985 .

[2] C. Zipfel,et al. The migration of gold from the p-contact as a source of dark spot defects in InP/InGaAsP LED's , 1983, IEEE Transactions on Electron Devices.

[3] W. Bonner,et al. Metallurgical Behavior of Gold‐Based Ohmic Contacts to the InP / InGaAsP Material System , 1982 .

[4] H. Temkin,et al. Structural study of alloyed gold metallization contacts on InGaAsP/InP layers , 1982 .

[5] H. Temkin,et al. In0.53ga0.47as contact layer for 1.3 μm light-emitting diodes , 1981 .

[6] G. Pelous,et al. On the formation of binary compounds in Au/InP system , 1981 .

[7] H. Ishikawa,et al. V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser with Smooth Far Field Pattern and Stable Aging Characteristics , 1982 .

[8] W. Bonner,et al. Ohmic contacts to p‐type InP using Be‐Au metallization , 1980 .

[9] H. Nagai,et al. InP‐GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelength , 1978 .

[10] W. Hume-rothery,et al. The equilibrium diagram of the system gold-gallium , 1966 .

[11] W. Hume-rothery,et al. The equilibrium diagram of the system gold-indium , 1964, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[12] Thomas R. Perry,et al. High‐Temperature Oxidation and Vacuum Dissociation Studies on the A{111} and B{1̄1̄1̄} Surfaces of Gallium Arsenide , 1961 .