论文信息 - Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate - 字舞流文

Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate

Y. Arakawa | E. Augendre | L. Clavelier | M. Nishioka | D. Guimard | M. Rajesh | S. Faure