NIEL and damage correlations for high-energy protons in gallium arsenide devices

A longstanding discrepancy between proton nonionizing energy loss (NIEL) calculations and experimental measurements in GaAs devices for E>20 MeV is explored. The various calculations of proton NIEL in GaAs are consistent. The experimental results and calculations can be made to agree by various methods that restrict the effect of high-energy recoils, such as the neutron "damage efficiency function." However, it should be noted that some damage coefficients track the total NIEL and further work is clearly required.

[1]  Cheryl J. Dale,et al.  Displacement damage in GaAs structures , 1988 .

[2]  P. Hinrichsen,et al.  Photoluminescence study of gallium vacancy defects in gallium arsenide irradiated by relativistic protons , 1997 .

[3]  Robert J. Walters,et al.  Modeling solar cell degradation in space: A comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches † , 2001 .

[4]  M. Aubin,et al.  Photoluminescence study of gallium arsenide irradiated with 15 MeV alpha particles , 1999 .

[5]  S. Khanna,et al.  Correlation of proton radiation damage in InGaAs-GaAs quantum-well light-emitting diodes , 2001 .

[6]  Insoo Jun,et al.  Effects of secondary particles on the total dose and the displacement damage in space proton environments , 2001 .

[7]  Mark B. Chadwick,et al.  Updated NIEL calculations for estimating the damage induced by particles and γ-rays in Si and GaAs , 2001 .

[8]  A. L. Barry,et al.  The energy dependence of lifetime damage constants in GaAs LEDs for 1-500 MeV protons , 1995 .

[9]  Robert J. Walters,et al.  Proton displacement damage and ionizing dose for shielded devices in space , 1997 .

[10]  Nuclear and damage effects in Si produced by irradiations with medium energy protons , 1991 .

[11]  E. A. Wolicki,et al.  Energy Dependence of Proton Displacement Damage Factors for Bipolar Transistors , 1986, IEEE Transactions on Nuclear Science.

[12]  Maximo S. Lazo,et al.  Neutron damage equivalence in GaAs , 1991 .

[13]  S. Messenger,et al.  Electron and proton irradiation-induced degradation of epitaxial InP solar cells , 1996 .

[14]  L. Winsberg.  Systematics of particle-nucleus reactions. I. Parameters , 1980 .

[15]  P. W. Marshall,et al.  Correlation of Particle-Induced Displacement Damage in Silicon , 1987, IEEE Transactions on Nuclear Science.

[16]  Weaver,et al.  Atomic disorder and the transition temperature of cuprate superconductors. , 1992, Physical review. B, Condensed matter.

[17]  Robert J. Walters,et al.  A new approach to damage prediction for solar cells exposed to different radiations , 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

[18]  S. Lazanu,et al.  Si, GaAs and diamond damage in pion fields with application to LHC , 1998 .

[19]  Y. Ikeda,et al.  Radiation damage factor for ion-implanted silicon detectors irradiated with heavy ions , 1995 .

[20]  Robert J. Walters,et al.  Damage correlations in semiconductors exposed to gamma, electron and proton radiations , 1993 .

[21]  G. Dienes,et al.  Radiation Effects in Solids , 1953 .

[22]  Arie Ruzin,et al.  Comparison of radiation damage in silicon induced by proton and neutron irradiation , 1999 .

[23]  G. Kulcinski,et al.  Simulation of high fluence fast neutron damage with heavy ion bombardment , 1971 .

[24]  J. R. Srour,et al.  Universal damage factor for radiation-induced dark current in silicon devices , 2000 .

[25]  J. Palms,et al.  Ionization Produced by Energetic Germanium Atoms within a Germanium Lattice , 1966 .

[26]  Edward A. Burke,et al.  Energy Dependence of Proton-Induced Displacement Damage in Silicon , 1986, IEEE Transactions on Nuclear Science.