Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

Abstract The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO 4 crystal and a Cr 4+ :YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO 4 optically contacted on a 0.4 mm long Cr 4+ :YAG leading to a plano–plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.

[1]  F. Balembois,et al.  High-repetition-rate 300-ps pulsed ultraviolet source with a passively Q-switched microchip laser and a multipass amplifier. , 1999, Optics letters.

[2]  Shengzhi Zhao,et al.  Laser-diode end-pumped passively Q-switched Nd:YVO4 laser with Cr4+:YAG saturable absorber , 2002 .

[3]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[4]  F. Kärtner,et al.  Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers , 1996 .

[5]  J. Zayhowski,et al.  Pump-induced bleaching of the saturable absorber in short-pulse Nd:YAG/Cr/sup 4+/:YAG passively Q-switched microchip lasers , 2003 .

[6]  Rüdiger Paschotta,et al.  Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers , 2001 .

[7]  Michael Bass,et al.  A generalized model for passively Q-switched lasers including excited state absorption in the saturable absorber , 1997 .

[8]  D. G. Kocher,et al.  Three-dimensional imaging laser radar with a photon-counting avalanche photodiode array and microchip laser. , 2002, Applied optics.

[9]  Nam Seong Kim,et al.  Diode-pumped passively Q-switched Nd:GdVO4 lasers operating at 1.06 μm wavelength , 2000 .

[10]  Patrick Georges,et al.  Picosecond laser source at 1 MHz with continuous tunability in the visible red band , 2003 .

[11]  Andrew G. Glen,et al.  APPL , 2001 .

[12]  D. Y. Tang,et al.  High power passively Q-switched Nd:GdVO4 lasers , 2004 .

[13]  T Jensen,et al.  LETTERS TO THE EDITOR: The Nd:GdVO4 crystal: a new material for diode-pumped lasers , 1992 .

[14]  Horst Weber,et al.  Efficient passive Q-switching operation of a diode-pumped Nd:GdVO 4 laser with a Cr 4+ :YAG saturable absorber , 2003 .

[15]  T. Jensen,et al.  Spectroscopic characterization and laser performance of diode-laser-pumped Nd: GdVO4 , 1994 .

[16]  J. Zayhowski,et al.  Diode-pumped passively Q-switched picosecond microchip lasers. , 1994, Optics letters.

[17]  S. Li,et al.  Passively Q-switched Nd:YVO(4) laser with a Cr(4+):YAG crystal saturable absorber. , 1997, Applied optics.

[18]  Y. Zavartsev,et al.  Diode pumped 500-picosecond Nd:GdVO4 Raman laser , 2004 .