Point defect creation by proton and carbon irradiation of α-Ga2O3

Films of α-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 × 1015 cm−2 and with 7 MeV C4+ ions with a fluence of 1.3 × 1013 cm−2 and characterized by a suite of measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated Current (TSC), Microcathodoluminescence (MCL), Capacitance–frequency (C–f), photocapacitance and Admittance Spectroscopy (AS), as well as by Positron Annihilation Spectroscopy (PAS). Proton irradiation creates a conducting layer near the peak of the ion distribution and vacancy defects distribution and introduces deep traps at Ec-0.25, 0.8, and 1.4 eV associated with Ga interstitials, gallium–oxygen divacancies VGa–VO, and oxygen vacancies VO. Similar defects were observed in C implanted samples. The PAS results can also be interpreted by assuming that the observed changes are due to the introduction of VGa and VGa–VO.

[1]  P. Karaseov,et al.  Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs , 2022, Vacuum.

[2]  A. Losev,et al.  Laser ion source for semiconductor applications , 2022, Journal of Physics: Conference Series.

[3]  Jihyun Kim,et al.  Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance , 2022, Journal of Vacuum Science & Technology A.

[4]  G. Verzellesi,et al.  GaN-based power devices: Physics, reliability, and perspectives , 2021, Journal of Applied Physics.

[5]  S. J. Pearton,et al.  Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors , 2021, ECS Journal of Solid State Science and Technology.

[6]  F. Tuomisto,et al.  Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3 , 2021, Journal of Applied Physics.

[7]  Jerzy Dryzek,et al.  Analysis of positron profiling data using e+DSc computer code , 2021, Comput. Phys. Commun..

[8]  S. Fujita,et al.  Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics , 2021 .

[9]  Y. Kumagai,et al.  Split Ga vacancies in n-type and semi-insulating β-Ga2O3 single crystals , 2021, Applied Physics Letters.

[10]  N. B. Smirnov,et al.  Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers , 2020, Journal of Physics D: Applied Physics.

[11]  S. Stepanov,et al.  Editors’ Choice—Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy , 2020 .

[12]  S. Fujita,et al.  Gallium Oxide: Materials Properties, Crystal Growth, and Devices , 2020 .

[13]  E. Ahmadi,et al.  Materials issues and devices of α- and β-Ga2O3 , 2019, Journal of Applied Physics.

[14]  Y. Matsushita,et al.  Energetics and electronic structure of native point defects in α-Ga2O3 , 2019, Applied Physics Express.

[15]  A. Perron,et al.  Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 , 2019, APL Materials.

[16]  F. Ren,et al.  Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga2O3 (Mg) , 2019, ECS Journal of Solid State Science and Technology.

[17]  S. J. Pearton,et al.  Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS , 2018, Journal of Applied Physics.

[18]  F. Ren,et al.  Electrical properties of bulk semi-insulating β-Ga2O3(Fe) , 2018, Applied Physics Letters.

[19]  A. Uedono,et al.  The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN , 2018 .

[20]  Stephen J. Pearton,et al.  A review of Ga2O3 materials, processing, and devices , 2018 .

[21]  P. B. Lagov,et al.  Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing , 2017 .

[22]  E. M. Geifman,et al.  Accelerator-based electron beam technologies for modification of bipolar semiconductor devices , 2016 .

[23]  S. Dunham,et al.  Band bending and surface defects in β-Ga2O3 , 2012 .

[24]  D. S. Kamber,et al.  Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation , 2009 .

[25]  N. Schell,et al.  Determination of absolute defect concentrations for saturated positron trapping – deformed polycrystalline Ni as a case study , 2005 .

[26]  J. P. Zielinger,et al.  Photoinduced current transient spectroscopy in high‐resistivity bulk materials: Instrumentation and methodology , 1988 .