A Nonquasi-Static Empirical Model of Electron Devices

A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed charge-controlled approach. The model is based on the definition of a virtual quasi-static device, associated with the actual one, which is controlled by means of equivalent voltage sources. The advantage of this approach is that conventional purely quasi-static models can be still adopted even at very high frequencies, if suitable equivalent voltages are applied. Identification from small-signal measurements and implementation into commercially available computer-aided design tools of the new nonquasi-static model are described in this paper. Finally, by considering a GaAs p-high electron mobility transistor, accurate prediction capabilities at microwaves and millimeter frequencies are experimental verified and compared with a more conventional equivalent-circuit-based model

[1]  T. Ohguro,et al.  Non-quasi-static model for MOSFET based on carrier-transit delay , 2004 .

[2]  Patrick Roblin,et al.  Improved small-signal equivalent circuit model and large-signal state equations for the MOSFET/MODFET wave equation , 1991 .

[3]  J. Wood,et al.  Bias-dependent linear, scalable millimeter-wave FET model , 2000, IMS 2000.

[4]  R. Daniels,et al.  A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach , 1993 .

[5]  W. Curtice.  A MESFET Model for Use in the Design of GaAs Integrated Circuits , 1980 .

[6]  Roger D. Pollard,et al.  Low-frequency dispersion and its influence on the intermodulation performance of AlGaAs/GaAs HBTs , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[7]  M. Pagani,et al.  Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena: Research Articles , 2006 .

[8]  J. Johnson,et al.  Generalized nonlinear FET/HEMT modeling , 2004 .

[9]  John Michael Golio.  Microwave MESFETs and HEMTs , 1991 .

[10]  H. Fukui,et al.  Determination of the basic device parameters of a GaAs MESFET , 1979, The Bell System Technical Journal.

[11]  M. Pagani,et al.  Nonlinear RF device modelling in the presence of low‐frequency dispersive phenomena , 2006 .

[12]  H. Massler,et al.  A simplified broad-band large-signal nonquasi-static table-based FET model , 2000 .

[13]  H. K. Gummel.  A charge control relation for bipolar transistors , 1970, Bell Syst. Tech. J..

[14]  J. J. Paulos,et al.  Unified nonquasi-static modeling of the long-channel four-terminal MOSFET for large- and small-signal analyses , 1989 .

[15]  Alessandra Costanzo,et al.  An accurate bilateral FET model suitable for general nonlinear and power applications , 2000 .

[16]  Kye-Ik Jeon,et al.  A frequency dispersion model of GaAs MESFET for large-signal applications , 1997 .

[17]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[18]  T. Kacprzak,et al.  Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics , 1985 .

[19]  P.A. Traverso,et al.  Accurate pHEMT nonlinear modeling in the presence of low-frequency dispersive effects , 2005, IEEE Transactions on Microwave Theory and Techniques.

[20]  R.A. Pucel,et al.  GaAs FET device and circuit simulation in SPICE , 1987, IEEE Transactions on Electron Devices.

[21]  A. Santarelli,et al.  A simple non-quasi-static non-linear model of electron devices , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[22]  Thomas J. Brazil,et al.  A scalable general-purpose model for microwave FETs including DC/AC dispersion effects , 1997 .

[23]  A. Santarelli,et al.  Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs , 2002, IEEE Microwave and Wireless Components Letters.

[24]  C. Turchetti,et al.  A CAD-oriented non-quasi-static approach for the transient analysis of MOS ICs , 1986 .