论文信息 - 1.23 /spl mu/m long wavelength highly strained GaInAs/GaAs quantum well laser

1.23 /spl mu/m long wavelength highly strained GaInAs/GaAs quantum well laser

We were able to extend the emission wavelength of highly strained GaInAs/GaAs SQWs over 1.2 /spl mu/m by employing a high growth rate of 9 /spl mu/m/h. We obtained the longest PL peak wavelength of 1.27 /spl mu/m. We also demonstrated a highly strained GaInAs/GaAs SQW stripe-laser. The lasing wavelength reached 1.23 /spl mu/m with a threshold current density of 1.7 kA/cm/sup 2/.

Fumio Koyama | Tomoyuki Miyamoto | Takashi Kondo | Masakazu Arai | A. Onomura

[1] F. Koyama,et al. Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer , 1999 .

[2] S. Corzine,et al. Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio , 2002 .

[3] Mattias Hammar,et al. 1260 nm InGaAs vertical-cavity lasers , 2002 .