GaAs molecular beam epitaxy monolithic power amplifiers at U-band

The design, fabrication, and measurements for a 44-GHz band molecular-beam epitaxy (MBE) monolithic power amplifiers are presented. The devices are based on an optimized device structure of large gate-width periphery (0.8 mm). The circuit design approach allows direct cascading of MIMIC (millimeter-wave monolithic integrated circuit) chips to provide useful power gain for system implementation. A five-stage balanced amplifier is highlighted that provided a linear gain of 15.1 dB and maximum output power of 500 mW at 42.5 GHz.<<ETX>>

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