Soft errors in advanced computer systems

As the dimensions and operating voltages of computer electronics shrink to satisfy consumers' insatiable demand for higher density, greater functionality, and lower power consumption, sensitivity to radiation increases dramatically. In terrestrial applications, the predominant radiation issue is the soft error, whereby a single radiation event causes a data bit stored in a device to be corrupted until new data is written to that device. This article comprehensively analyzes soft-error sensitivity in modern systems and shows it to be application dependent. The discussion covers ground-level radiation mechanisms that have the most serious impact on circuit operation along with the effect of technology scaling on soft-error rates in memory and logic.

[1]  P. Eaton,et al.  Soft error rate mitigation techniques for modern microcircuits , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

[2]  M. Baze,et al.  A digital CMOS design technique for SEU hardening , 2000 .

[3]  M. Baze,et al.  Comparison of error rates in combinational and sequential logic , 1997 .

[4]  T. Calin,et al.  Upset hardened memory design for submicron CMOS technology , 1996 .

[5]  P. Dodd,et al.  Production and propagation of single-event transients in high-speed digital logic ICs , 2004, IEEE Transactions on Nuclear Science.

[6]  E. Normand Single event upset at ground level , 1996 .

[7]  Jr. Leonard R. Rockett Simulated SEU hardened scaled CMOS SRAM cell design using gated resistors , 1992 .

[8]  Lorena Anghel,et al.  Cost reduction and evaluation of temporary faults detecting technique , 2000, DATE '00.

[9]  E. Cannon,et al.  SRAM SER in 90, 130 and 180 nm bulk and SOI technologies , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[10]  E. Paul Nuclear Science , 1957, Nature.

[11]  R. R. O'Brien,et al.  Dynamics of Charge Collection from Alpha-Particle Tracks in Integrated Circuits , 1981, 19th International Reliability Physics Symposium.

[12]  R. Baumann,et al.  Boron compounds as a dominant source of alpha particles in semiconductor devices , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

[13]  R. Velazco,et al.  Design of SEU-hardened CMOS memory cells: the HIT cell , 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).

[14]  Gilles Gasiot,et al.  Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node , 2003 .

[15]  J. Ziegler,et al.  The effect of sea level cosmic rays on electronic devices , 1981, 1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[16]  Lloyd W. Massengill,et al.  Basic mechanisms and modeling of single-event upset in digital microelectronics , 2003 .

[17]  Robert C. Baumann,et al.  Neutron-induced 10B fission as a major source of soft errors in high density SRAMs , 2001, Microelectron. Reliab..

[18]  T. May,et al.  A New Physical Mechanism for Soft Errors in Dynamic Memories , 1978, 16th International Reliability Physics Symposium.

[19]  O. Musseau Single-event effects in SOI technologies and devices , 1996 .