Characterization and comparison of latest generation 900-V and 1.2-kV SiC MOSFETs

This paper performs static and dynamic performance characterization of latest generation 900-V and 1.2-kV discrete Silicon Carbide (SiC) MOSFETs from four well-known manufacturers: CREE, ROHM, General Electric (GE) and Sumitomo Electric Industries (SEI). The static characterization performed includes acquisition of output characteristics, transfer characteristics, specific on-state resistances, threshold voltages and junction capacitances of the devices under test (DUTs). The static characterizations are done from 25°C up to 150°C to investigate variation of parameters versus temperature. At the other hand and for dynamic characterization, following a double-pulse tester design the tests are done at four different temperatures on all devices: 25°C, 100°C, 150°C and 200°C. In dynamic test, recommended gate voltages are applied to all devices and the switching speeds are matched. The switching losses are computed from double-pulse test (DPT) results.

[1]  Dushan Boroyevich,et al.  Investigation and comparison of cascaded H-bridge and modular multilevel converter topologies for medium-voltage drive application , 2014, IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society.

[2]  Honggang Sheng,et al.  Investigation of 1.2 kV SiC MOSFET for high frequency high power applications , 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[3]  Dushan Boroyevich,et al.  Design and comparison of cascaded H-bridge, modular multilevel converter and 5-L active neutral point clamped topologies for drive application , 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).

[4]  J. Glaser,et al.  Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[5]  C. Zetterling,et al.  SiC power devices — Present status, applications and future perspective , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[6]  Dushan Boroyevich,et al.  Investigation and design of modular multilevel converter in AFE mode with minimized passive elements , 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).

[7]  R. Burgos,et al.  High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs , 2013, 2013 IEEE Energy Conversion Congress and Exposition.

[8]  Jun Wang,et al.  Characterization, Modeling, and Application of 10-kV SiC MOSFET , 2008, IEEE Transactions on Electron Devices.

[9]  A. Agarwal,et al.  Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems , 2007, 2007 IEEE Industry Applications Annual Meeting.

[10]  Samir Hazra,et al.  Solid State Transformer and MV grid tie applications enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters , 2014 .

[11]  Zheng Chen.  Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices , 2009 .

[12]  Fei Wang,et al.  Static and dynamic performance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[13]  D. Boroyevich,et al.  Performance evaluation of SiC power MOSFETs for high-temperature applications , 2012, 2012 15th International Power Electronics and Motion Control Conference (EPE/PEMC).

[14]  R. Burgos,et al.  Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs , 2009, 2009 IEEE Energy Conversion Congress and Exposition.

[15]  Lixing Fu,et al.  Si and SiC power MOSFET characterization and comparison , 2014, 2014 IEEE Conference and Expo Transportation Electrification Asia-Pacific (ITEC Asia-Pacific).