Low-frequency noise spectroscopy

Electrical noise in excess of thermal and shot noise is caused by imperfections in the device. Its control can improve the quality of the device and its measurement can give considerable information about the nature of the defects involved. For defects with discrete energy distributions spectroscopy can be used to identify the defect and measure its properties. Excess noise has large intensity at low frequencies and several mechanisms can be identified. The value of the technique for many systems is described. Comparison is made with other methods of studying such defects. >

[1]  R. Zijlstra,et al.  Generation−recombination noise in AlxGa1-xAs : temperature dependence , 1990 .

[2]  S. Wright,et al.  Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures , 1988 .

[3]  A. Evans,et al.  Noise and electrical characterisation of e-beam rapid isothermally annealed n-channel MOSFETS , 1989 .

[4]  F. J. Scholz,et al.  Low-frequency noise as a tool for characterization of near-band impurities in silicon , 1992 .

[5]  S. Jang,et al.  Low-frequency current and intensity noise in AlGaAs laser diodes , 1993 .

[6]  M. J. Churchill,et al.  Carrier density fluctuation noise in silicon junction field effect transistors at low temperatures , 1971 .

[7]  Chih-Tang Sah,et al.  Theory of low-frequency generation noise in junction-gate field-effect transistors , 1964 .

[8]  S. Machlup,et al.  Noise in Semiconductors: Spectrum of a Two‐Parameter Random Signal , 1954 .

[9]  P. Landsberg,et al.  Equivalent circuits for recombination-generation processes in semiconductors: A unified approach , 1989 .

[10]  Schuurmans,et al.  Noise spectroscopy as a tool to investigate the temperature dependence of localization in a quantum Hall system. , 1990, Physical review. B, Condensed matter.

[11]  M. A. Abdala,et al.  Correlation between trap characterisation by low frequency noise, mutual conductance dispersion, oscillations and DLTS in GaAs MESFETs , 1992 .

[12]  Sh. M. Kogan REVIEWS OF TOPICAL PROBLEMS: Low-frequency current noise with a 1/f spectrum in solids , 1985 .

[13]  C. Hu,et al.  Hot-electron-induced traps studied through the random telegraph noise , 1991, IEEE Electron Device Letters.

[14]  A. J. Grant,et al.  Low Frequency Noise and Deep Traps in Schottky Barrier Diodes , 1978 .

[15]  R. Cavicchi,et al.  Observation of telegraph noise in the reverse photocapacitance, photocurrent, and forward dark current of a quantum‐well diode , 1990 .

[16]  A. Touboul,et al.  Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors , 1976 .

[17]  B. K. Jones,et al.  Electrical Noise as a Measure of Quality and Reliability in Electronic Devices , 1993 .

[18]  K. Kandiah,et al.  Limits of resolution of charge sensitive detector systems , 1993 .

[19]  M. Weissman 1/f noise and other slow, nonexponential kinetics in condensed matter. , 1988 .

[20]  R. Hallgren Low-bias-noise spectroscopy of field-effect transistor channels: Depletion-region trap models and spectra , 1990 .

[21]  Excess generation-recombination noise in reverse biased Schottky-barrier diodes , 1988 .

[22]  J. Copeland Semiconductor impurity analysis from low-frequency noise spectra , 1971 .

[23]  A. Evans,et al.  Shallow defects responsible for GR noise in MOSFETs , 1991 .

[24]  R. Zijlstra,et al.  Generation-recombination noise in p-type silicon , 1982 .

[25]  Webb,et al.  Temperature dependence of noise processes in metals. , 1986, Physical review. B, Condensed matter.

[26]  Gijs Bosman,et al.  Low frequency noise measurements as a tool to analyze deep-level impurities in semiconductor devices , 1987 .

[27]  The excess noise in buried-channel MOS transistors , 1987 .

[28]  K. Kandiah,et al.  A physical model for random telegraph signal currents in semiconductor devices , 1989 .

[29]  Decomposition of generation-recombination noise spectra in separate Lorentzians , 1985 .

[30]  The steady state fluctuation-dissipation theorem , 1967 .

[31]  Z. Fang Low-frequency pseudogeneration—Recombination noise of MOSFET's stressed by channel hot electrons in weak inversion , 1986 .

[32]  P. M. Horn,et al.  Low-frequency fluctuations in solids: 1/f noise , 1981 .

[33]  R. Müller,et al.  Generation-Recombination Noise , 1978 .

[34]  C. Kleint,et al.  Field-emission flicker noise from potassium adsorbed on W(111) bounded and unbounded surface diffusion by spectral analysis , 1986 .

[35]  R. Zijlstra,et al.  Diffusion and inter-valley noise in (100) n-channel Si-MOSFETs from T = 4.2 to 295 K , 1988 .

[36]  J. W. Haslett,et al.  Temperature dependence of low-frequency excess noise in junction-gate FET's , 1972 .

[37]  R. Zijlstra,et al.  Generation-recombination noise in AlxGa1-xAs , 1991 .

[38]  E. Kendall,et al.  Design considerations for improving low-temperature noise performance of silicon JFET's , 1975 .

[39]  Lode K. J. Vandamme,et al.  Noise as a diagnostic tool for quality and reliability of electronic devices , 1994 .

[40]  Y. Su,et al.  Low‐frequency noise in InP‐based NnPnN double heterojunction bipolar transistors , 1992 .

[41]  G. Ghibaudo,et al.  Impact of scaling down on low frequency noise in silicon MOS transistors , 1992 .

[42]  Werner,et al.  Noise spectroscopy of silicon grain boundaries. , 1988, Physical Review B (Condensed Matter).

[43]  F. Hooge,et al.  Low‐frequency noise in electron irradiated n‐GaAs epitaxial layers , 1993 .

[44]  C. Kleint,et al.  SURFACE DIFFUSION OF LITHIUM ON THE W(112) PLANE BY FIELD EMISSION SPECTRAL DENSITY ANALYSIS , 1989 .

[45]  James S. Harris,et al.  Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistors , 1992 .

[46]  Schulz,et al.  Fluctuations of the Au-Si(100) Schottky barrier height. , 1993, Physical review letters.

[47]  P. Landsberg,et al.  Recombination-generation noise theory for semiconductors in equilibrium , 1962, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[48]  Generation―recombination noise due to localisation in spin-split Landau levels of a quantum Hall system , 1989 .

[49]  Robert A. Buhrman,et al.  Composition of 1/f noise in metal-insulator-metal tunnel junctions , 1984 .

[50]  Yisong Dai Deep-level impurity analysis for p-n junctions of a bipolar transistor from low-frequency g-r noise measurements , 1989 .

[51]  R. Zijlstra,et al.  Current noise in N-type AlxGa1 −xAs , 1988 .

[52]  S. S. Villareal,et al.  Low‐frequency noise measurements on AlGaAs/GaAs resonant tunnel diodes , 1989 .

[53]  Dieter K. Schroder,et al.  Low frequency noise and DLTS as semiconductor device characterization tools , 1988 .

[54]  K. Kandiah,et al.  LOW FREQUENCY NOISE IN JUNCTION FIELD EFFECT TRANSISTORS , 1978 .

[55]  R. Buhrman,et al.  Electron trap states and low frequency noise in tunnel junctions , 1987 .

[56]  A. J. Grant,et al.  Deep traps in ideal n-InP Schottky diodes , 1978 .

[57]  A. Ziel Noise in solid state devices and circuits , 1986 .

[58]  R. Zijlstra,et al.  Voltage noise in an AlxGa1−xAs‐GaAs heterostructure , 1990 .

[59]  M. J. Kirton,et al.  Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[60]  M. Buckingham Noise in electronic devices and systems , 1983 .

[61]  R. E. Burgess The Statistics of Charge Carrier Fluctuations in Semiconductors , 1956 .