Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack
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[1] Bruno Morten,et al. Piezoresistivity effects in MOS-FET useful for pressure transducers , 1979 .
[2] S. Thompson,et al. Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[3] M. Silberstein,et al. A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors , 2003, IEEE International Electron Devices Meeting 2003.
[4] P. Bai,et al. A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 /spl mu/m/sup 2/ SRAM cell , 2002, Digest. International Electron Devices Meeting,.
[5] O. Faynot,et al. 25nm Short and Narrow Strained FDSOI with TiN/HfO2 Gate Stack , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
[6] G. Reimbold,et al. Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress , 2004, IEEE Transactions on Electron Devices.
[7] I. Lauer,et al. Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain , 2005, IEEE Electron Device Letters.
[8] J. Bardeen,et al. Deformation Potentials and Mobilities in Non-Polar Crystals , 1950 .
[9] M. Ieong,et al. Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs , 2003, IEEE International Electron Devices Meeting 2003.
[10] M. Mouis,et al. Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters , 2006, IEEE Transactions on Electron Devices.
[11] Y. Kanda,et al. A graphical representation of the piezoresistance coefficients in silicon , 1982, IEEE Transactions on Electron Devices.
[12] Piezoresistance in n-channel inversion layers of Si MOSFET's , 1990 .
[13] M. Nishihara,et al. Nonlinearity of the piezoresistance effect of p-type silicon diffused layers , 1982, IEEE Transactions on Electron Devices.
[14] David B. Scott,et al. Effects of uniaxial mechanical stress on drive current of 0.13 /spl mu/m MOSFETs , 2003 .
[15] G. Dorda,et al. Piezoresistance in Quantized Conduction Bands in Silicon Inversion Layers , 1971 .
[16] Richard C. Jaeger,et al. Piezoresistive characteristics of short-channel MOSFETs on (100) silicon , 2001 .
[17] M. Mouis,et al. Experimental evidence and extraction of the electron mass variation in [110] uniaxially strained MOSFETs , 2007 .
[18] K. Saraswat,et al. Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[19] Using Piezoresistance Model With $C$– $R$ Conversion for Modeling of Strain-Induced Mobility , 2008, IEEE Electron Device Letters.
[20] Scott E. Thompson,et al. Comparison between high-field piezoresistance coefficients of Si metal-oxide-semiconductor field-effect transistors and bulk Si under uniaxial and biaxial stress , 2008 .
[21] J. Hensel,et al. Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond , 1965 .
[22] P. Yang,et al. Giant piezoresistance effect in silicon nanowires , 2006, Nature nanotechnology.
[23] S. Laux,et al. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys , 1996 .
[24] G. E. Pikus,et al. Symmetry and strain-induced effects in semiconductors , 1974 .
[25] Guido Groeseneken,et al. The effect of externally imposed mechanical stress on the hot-carrier-induced degradation of deep-sub micron nMOSFET's , 1997 .
[26] J. Bardeen,et al. Energy Bands and Mobilities in Monatomic Semiconductors , 1950 .
[27] J. Welser,et al. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors , 1996 .
[28] Charles S. Smith. Piezoresistance Effect in Germanium and Silicon , 1954 .
[29] Suzuki,et al. Origin of the shear piezoresistance coefficient pi 44 of n-type silicon. , 1991, Physical review. B, Condensed matter.
[30] Osama M. Nayfeh,et al. Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations , 2006, IBM J. Res. Dev..
[31] Y. Nishi,et al. Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[32] S. Thompson,et al. Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ($\sim$1.5 GPa) Channel Stress , 2007, IEEE Electron Device Letters.
[33] J. Welser,et al. Strain dependence of the performance enhancement in strained-Si n-MOSFETs , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[34] O. Weber,et al. Examination of Additive Mobility Enhancements for Uniaxial Stress Combined with Biaxially Strained Si, Biaxially Strained SiGe and Ge Channel MOSFETs , 2007, 2007 IEEE International Electron Devices Meeting.