An analytical expression is developed for the transition probability per unit time for impact ionization by holes. The approach is based upon time dependent perturbation calculations and the Bloch functions for the states of electrons and holes. The threshold energy of ionization by holes is calculated for the valley L1 for the electron band structure of silicon. The results obtained for the probability are in good agreement with experimental results for threshold energy and theoretical results for the ionization probability.
Ein analytischer Ausdruck fur die Wahrscheinlichkeit der Stosionisation durch Locher wird abgeleitet. Dabei wird zeitabhangige Storungstheorie angewandt, und die Blochfunktionen fur Elektronen und Locher werden benutzt. Die Schwellenenergie der Ionisation durch Locher wird fur das L1-Band der Elektronen in Silizium berechnet. Es ergibt sich gute Ubereinstimmung mit experimentellen Werten fur die Schwellenenergie und theoretischen Ergebnisse fur die Ionisierungswahrscheinlichkeit.
[1]
C. R. Crowell,et al.
Energy-Conservation Considerations in the Characterization of Impact Ionization in Semiconductors
,
1972
.
[2]
Marvin L. Cohen,et al.
Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures
,
1966
.
[3]
G. A. Baraff,et al.
Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors
,
1962
.
[4]
H. Risken,et al.
Distribution Functions for Hot Electrons in Many-Valley Semiconductors
,
1961
.
[5]
W. Shockley,et al.
Mobilities of Electrons in High Electric Fields
,
1951
.