论文信息 - Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation - 字舞流文

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

C. R. Abernathy | J. Kim | F. Ren | S. Pearton | R. Mehandru | C. Abernathy | R. Birkhahn | B. Peres | G. Jessen | R. Fitch | J. Gillespie | N. Moser | A. Crespo | B. Gila | G. Via | T. Jenkins | B. Luo | D. Gotthold | A. Onstine | M. J. Yannuzi | S. Pearton | J. Kim