Design of a family of novel CNTFET-based dynamically reconfigurable logic gates

This paper describes a family of novel dynamically reconfigurable logic gates with double-gate carbon nanotube field-effect transistors (DG-CNTFET). The design is based on a property specific to this device: ambivalence, enabling p-type or n-type behavior depending on the back-gate voltage. Through simulations using available models, these gates and a 10-function ALU offering fine-grain reconfigurability are shown to operate at 20 GHz. We also give an example functional block (full adder) to show how to construct logic circuits based on the association of physically identical reconfigurable logic cells.

[1]  T. Zimmer,et al.  Analysis of CNTFET physical compact model , 2006, International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006..

[2]  G. Dambrine,et al.  An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications , 2006, IEEE Electron Device Letters.

[3]  J. Knoch,et al.  High-performance carbon nanotube field-effect transistor with tunable polarities , 2005, IEEE Transactions on Nanotechnology.