0.25 /spl mu/m SOI technologies performance for low-power radio-frequency applications

In this work, two types of 0.25 /spl mu/m SOI MOSFET structures, partially- (PD) and fully-depleted (FD), are compared from the point of view of low-frequency noise and RF performances for device design. Fully-depleted technology with and without salicide process is used. The impact of the floating body effect is also investigated to be taken into account in RF design.