Ultrahigh resolution of calixarene negative resist in electron beam lithography

A nonpolymer material, calixarene derivative (hexaacetate p‐methnylcalix[6]arene) was tested as a high‐resolution negative resist under an electron beam lithography process. It showed under 10‐mm resolution with little side roughness and high durability to halide plasma etching. A sub‐10‐nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes.