论文信息 - On the ‘excess white noise’ in MOS transistors☆

On the ‘excess white noise’ in MOS transistors☆

Abstract Special silicon MOS transistors are fabricated to demonstrate that the proposed ‘excess white noise’ attributed to the mobility fluctuation does not exist. The previously observed excess noise over the white thermal noise is shown to be caused by a 1/f-type noise component due to noise measurements at insufficiently high frequencies on devices which have very high 1/f noise.

Chih-Tang Sah | L. D. Yau | C. Sah | L. Yau

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