Modeling of Reactive Sputtering—History and Development
暂无分享,去创建一个
[1] V. Shapovalov. Physicochemical model for reactive sputtering of a sandwich target , 2023, Journal of Applied Physics.
[2] D. Depla,et al. Effect of processing conditions on residual stress in sputtered transition metal nitrides (TiN, ZrN and TaN): Experiments and modeling , 2022, Surface and Coatings Technology.
[3] C. Balázsi,et al. Investigation of the RF Sputtering Process and the Properties of Deposited Silicon Oxynitride Layers under Varying Reactive Gas Conditions , 2022, Materials.
[4] K. Strijckmans,et al. A computational study of the double hysteresis phenomenon during reactive sputtering , 2022, Journal of Physics D: Applied Physics.
[5] F. Lu,et al. Air-based deposition of titanium‑aluminum oxynitride thin films by reactive magnetron sputtering , 2022, Surface and Coatings Technology.
[6] W. Tang,et al. Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric , 2022, Materials.
[7] V. Grudinin,et al. Magnetron deposition of chromium nitride coatings using a hot chromium target: Influence of magnetron power on the deposition rate and elemental composition , 2022, Surface and Coatings Technology.
[8] A. Thomann,et al. Properties of Ti-oxide thin films grown in reactive magnetron sputtering with self-heating target , 2022, Vacuum.
[9] E. Alves,et al. Tantalum-Titanium Oxynitride Thin Films Deposited by DC Reactive Magnetron Co-Sputtering: Mechanical, Optical, and Electrical Characterization , 2021, Coatings.
[10] V. Shapovalov. Hysteresis effect during reactive sputtering , 2021, Journal of Physics: Conference Series.
[11] A. Demir,et al. Simulation of the effect of argon pressure on thermal processes in the sputtering unit of a magnetron with a hot target , 2021 .
[12] K. Strijckmans,et al. Nitride formation during reactive sputter deposition of multi-principal element alloys in argon/nitrogen mixtures , 2021, Thin Solid Films.
[13] D. Depla,et al. On the grain size-thickness correlation for thin films , 2021 .
[14] D. Kolodko,et al. Comparison of thermal properties of a hot target magnetron operated in DC and long HIPIMS modes , 2021 .
[15] M. Fazio,et al. Prediction of crystallized phases of amorphous Ta2O5-based mixed oxide thin films using a density functional theory database , 2021 .
[16] R. Franz,et al. Influence of the nitrogen content on the structure and properties of MoNbTaVW high entropy alloy thin films , 2021 .
[17] V. Shapovalov. Deposition of solid solution films using reactive magnetron sputtering of a sandwich target , 2021 .
[18] J. Sagás,et al. Alternative anode geometry for magnetron sputtering , 2020 .
[19] D. Depla. Sputter deposition with powder targets: An overview , 2020 .
[20] R. Schelfhout,et al. Sputter yield measurements to evaluate the target state during reactive magnetron sputtering , 2020 .
[21] A. Kelemen,et al. Modeling reactive magnetron sputtering: a survey of different modeling approaches , 2020, Acta Universitatis Sapientiae, Informatica.
[22] J. Sagás,et al. Including substrate temperature in Berg model for reactive sputtering , 2020 .
[23] M. Fejer,et al. Structure and morphology of low mechanical loss TiO2-doped Ta2O5 , 2020, Optical Materials Express.
[24] J. Hnilica,et al. Influence of sputtered species ionisation on the hysteresis behaviour of reactive HiPIMS with oxygen admixture , 2020, Plasma Sources Science and Technology.
[25] Sheng-Hui Chen,et al. Characterization of silicon oxynitride films deposited by a high-power impulse magnetron sputtering deposition technique. , 2020, Applied optics.
[26] C. Michel,et al. Amorphous optical coatings of present gravitational-wave interferometers , 2019, Classical and Quantum Gravity.
[27] Huaping Zhao,et al. Optical, water splitting and wettability of titanium nitride/titanium oxynitride bilayer films for hydrogen generation and solar cells applications , 2020 .
[28] A. Selskis,et al. Design, preparation and characterization of antireflective coatings using oxynitride films , 2019 .
[29] J. Lunze,et al. Model approximation and stabilization of reactive sputter processes , 2019, Journal of Process Control.
[30] R. Schelfhout,et al. Modeling reactive magnetron sputtering: Opportunities and challenges , 2019, Thin Solid Films.
[31] V. Shapovalov,et al. I-V characteristics of magnetron with hot target sputtered in three-component gas mixture , 2019, Journal of Physics: Conference Series.
[32] S. A. Stepanov,et al. Mathematical model development for thin zinc oxide film formation with assigned dielectric constant values , 2019, Journal of Physics: Conference Series.
[33] D. S. Shestakov,et al. I-V characteristics of magnetron with hot titanium target sputtered in argon-oxygen mixture , 2019, Journal of Physics: Conference Series.
[34] G. Greczynski,et al. A simple model for non-saturated reactive sputtering processes , 2019, Thin Solid Films.
[35] D. S. Shestakov,et al. Reactive magnetron sputtering of hot titanium target in mixture of argon and nitrogen , 2019, Journal of Physics: Conference Series.
[36] V. Shapovalov. Hot Target. Physicochemical Model of Reactive Sputtering , 2019, Technical Physics.
[37] V. Shapovalov,et al. Studying heating of magnetron target based on measurement of substrate temperature , 2019, Vacuum.
[38] V. Shapovalov,et al. Modeling of thermal processes in magnetrons with single hot target and “sandwich-target” , 2019, Surface and Coatings Technology.
[39] R. Schelfhout,et al. Tutorial: Hysteresis during the reactive magnetron sputtering process , 2018, Journal of Applied Physics.
[40] B. Fegley,et al. Thermodynamics of Element Volatility and its Application to Planetary Processes , 2018, Reviews in Mineralogy and Geochemistry.
[41] V. Shapovalov,et al. Magnetron with a sputtering unit for deposition of binary alloy films and solid solutions of two compounds , 2018, IOP Conference Series: Materials Science and Engineering.
[42] V. Shapovalov,et al. Modeling of reactive sputtering of hot titanium target in nitrogen and oxygen , 2018, IOP Conference Series: Materials Science and Engineering.
[43] A. Pflug,et al. TiOx deposited by magnetron sputtering: a joint modelling and experimental study , 2018 .
[44] S. Konstantinidis,et al. The Target Material Influence on the Current Pulse during High Power Pulsed Magnetron Sputtering , 2017, Front. Phys..
[45] J. Greene,et al. Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017 , 2017 .
[46] V. Shapovalov,et al. Mechanical properties of titanium nitride films obtained by reactively sputtering with hot target , 2017 .
[47] A. A. Morozova,et al. Influence of technological parameters on the mechanical properties of titanium nitride films deposited by hot target reactive sputtering , 2017 .
[48] V. Shapovalov. High-power sputtering employed for film deposition , 2017 .
[49] Jan Lunze,et al. Model reduction and identification of nonlinear reactive sputter processes , 2017 .
[50] V. Shapovalov,et al. Thermal processes during reactive sputtering of hot titanium target , 2017 .
[51] V. Shapovalov,et al. Modelling of hot target reactive sputtering , 2017 .
[52] K. Strijckmans,et al. Perspective: Is there a hysteresis during reactive High Power Impulse Magnetron Sputtering (R-HiPIMS)? , 2017 .
[53] A. Bondarenko,et al. Physicochemical model for reactive sputtering of hot target , 2017 .
[54] T. P. Chen,et al. Modeling of a selective solar absorber thin film structure based on double TiNxOy layers for concentrated solar power applications , 2017 .
[55] G. Bleykher,et al. High-rate magnetron sputtering with hot target , 2016 .
[56] A. Bondarenko,et al. The target heating influence on the reactive magnetron sputtering process , 2016 .
[57] R. Schelfhout,et al. Hysteresis behavior during facing target magnetron sputtering , 2016 .
[58] S. Berg,et al. Applying "the upgraded Berg model" to predict hysteresis free reactive sputtering , 2016 .
[59] D. Depla,et al. The influence of the pressure on the microstructure of yttria-stabilized zirconia thin films deposited by dual magnetron sputtering , 2016 .
[60] A. Bondarenko,et al. Substrate heating and cooling during magnetron sputtering of copper target , 2016 .
[61] V. Shapovalov,et al. X-ray phase analysis of copper oxides films obtained by DC reactive magnetron sputtering , 2016, Glass Physics and Chemistry.
[62] L. Pinard,et al. Mechanical loss in state-of-the-art amorphous optical coatings , 2015, 1511.06172.
[63] J. Vlček,et al. A parametric model for reactive high-power impulse magnetron sputtering of films , 2016 .
[64] V. Shapovalov,et al. Raman spectroscopy of copper oxide films deposited by reactive magnetron sputtering , 2015 .
[65] K. Strijckmans,et al. Modeling target erosion during reactive sputtering , 2015 .
[66] V. Shapovalov,et al. Chemical composition and crystal structure of tungsten oxide films , 2014, Glass Physics and Chemistry.
[67] Takashi Matsukawa,et al. Spatial variation of the work function in nano-crystalline TiN films measured by dual-mode scanning tunneling microscopy , 2014 .
[68] Sören Berg,et al. Upgrading the “Berg-model” for reactive sputtering processes , 2014 .
[69] R. Dussart,et al. Energy Transferred From a Hot Nickel Target During Magnetron Sputtering , 2014, IEEE Transactions on Plasma Science.
[70] K. Strijckmans,et al. A time-dependent model for reactive sputter deposition , 2014 .
[71] G. Cao,et al. The effects of Ta2O5–ZnO films as cathodic buffer layers in inverted polymer solar cells , 2014 .
[72] J. Verbeeck,et al. Using the macroscopic scale to predict the nano-scale behavior of YSZ thin films , 2014 .
[73] D. Depla,et al. Influencing the hysteresis during reactive magnetron sputtering by gas separation , 2013 .
[74] Koen Strijckmans,et al. A study of the process pressure influence in reactive sputtering aiming at hysteresis elimination , 2013 .
[75] J. Oseguera,et al. Method to design stoichiometric deposition reactive sputtering without hysteresis , 2013 .
[76] J. Oseguera,et al. Thermodynamic model of reactive sputtering process , 2012 .
[77] V. Shapovalov,et al. A nonisothermal physicochemical model of synthesis of oxynitrides by reactive sputtering techniques , 2012, Glass Physics and Chemistry.
[78] D. Depla,et al. Composition-crystallinity-property relations in Mg-M-O films , 2012 .
[79] K. Strijckmans,et al. Modeling reactive magnetron sputtering: Fixing the parameter set , 2012 .
[80] U. Helmersson,et al. High power impulse magnetron sputtering discharge , 2012 .
[81] D. A. Duarte,et al. Modeling reactive sputter deposition of titanium nitride in a triode magnetron sputtering system , 2011 .
[82] J. Martan,et al. On surface temperatures during high power pulsed magnetron sputtering using a hot target , 2011 .
[83] V. Shapovalov,et al. Kinetics of internal photoeffect in titanium dioxide films , 2011 .
[84] R. Dussart,et al. On the measurement of energy fluxes in plasmas using a calorimetric probe and a thermopile sensor , 2010 .
[85] D. Depla,et al. Rotating cylindrical magnetron sputtering: Simulation of the reactive process , 2010 .
[86] V. Shapovalov. Nanopowders and films of titanium oxide for photocatalysis: A review , 2010 .
[87] D. Depla,et al. Quantification of the incorporation coefficient of a reactive gas on a metallic film during magnetron sputtering: The method and results , 2009 .
[88] D. Depla,et al. Modeling the flux of high energy negative ions during reactive magnetron sputtering , 2009 .
[89] Annemie Bogaerts,et al. Computer modelling of magnetron discharges , 2009 .
[90] D. Depla,et al. Method to Determine the Sticking Coefficient of O2 on Deposited Al During Reactive Magnetron Sputtering, Using Mass Spectrometry , 2009 .
[91] D. Depla,et al. Particle‐in‐Cell/Monte Carlo Collisions Model for the Reactive Sputter Deposition of Nitride Layers , 2009 .
[92] M. Wuttig,et al. Increase of the deposition rate in reactive sputtering of metal oxides using a ceramic nitride target , 2009 .
[93] Annemie Bogaerts,et al. Sputter-deposited Mg–Al–O thin films: linking molecular dynamics simulations to experiments , 2009 .
[94] D. Depla,et al. Magnetron sputter deposition: Linking discharge voltage with target properties , 2009 .
[95] Marek Eliáš,et al. Modelling of the reactive sputtering process with non-uniform discharge current density and different temperature conditions , 2009 .
[96] A. Anders. Deposition rates of high power impulse magnetron sputtering: Physics and economics , 2010 .
[97] E. Wallin,et al. Hysteresis-free reactive high power impulse magnetron sputtering , 2008 .
[98] Sören Berg,et al. Experiments and modeling of dual reactive magnetron sputtering using two reactive gases , 2008 .
[99] Sören Berg,et al. High rate reactive magnetron sputter deposition of titanium oxide , 2008 .
[100] D. Depla,et al. Modelling the growth of transition metal nitrides , 2008 .
[101] D. Depla,et al. Depositing Aluminium Oxide: A Case Study of Reactive Magnetron Sputtering , 2008 .
[102] D. Depla,et al. Reactive Sputter Deposition , 2008 .
[103] D. Güttler,et al. Modeling of plasma-target interaction during reactive magnetron sputtering of TiN , 2007 .
[104] D. Depla,et al. Towards a more complete model for reactive magnetron sputtering , 2007 .
[105] V. Shapovalov,et al. Nonisothermal chemical model of reactive sputtering , 2007 .
[106] Johan Haemers,et al. Understanding the discharge voltage behavior during reactive sputtering of oxides , 2007 .
[107] D. Depla,et al. Biaxial alignment in sputter deposited thin films , 2006 .
[108] A. Billard,et al. Hot target sputtering: A new way for high-rate deposition of stoichiometric ceramic films , 2006 .
[109] N. D. Rooij,et al. Optical, electrical and mechanical properties of the tantalum oxynitride thin films deposited by pulsing reactive gas sputtering , 2006 .
[110] D. Depla,et al. Mechanism of biaxial alignment in thin films, deposited by magnetron sputtering , 2006 .
[111] M. Fejer,et al. Titania-doped tantala/silica coatings for gravitational-wave detection , 2006, gr-qc/0610004.
[112] D. Kaczmarek,et al. Microstructure and Optical Properties of TiO2 Thin Films Prepared by Low Pressure Hot Target Reactive Magnetron Sputtering , 2006 .
[113] A. V. Mezenov,et al. Determining the optical constants of thin oxide films , 2006 .
[114] M. Wuttig,et al. Process stabilization and increase of the deposition rate in reactive sputtering of metal oxides and oxynitrides , 2006 .
[115] O. Lebedev,et al. Biaxially aligned titanium nitride thin films deposited by reactive unbalanced magnetron sputtering , 2006 .
[116] Sören Berg,et al. Dynamic Behaviour of the Reactive Sputtering Process , 2006 .
[117] D. J. Christie,et al. Control of reactive sputtering processes , 2005 .
[118] O. Lebedev,et al. Influence of the Ar/O2 ratio on the growth and biaxial alignment of yttria stabilized zirconia layers during reactive unbalanced magnetron sputtering , 2005 .
[119] R. Hippler,et al. Aluminium atom density and temperature in a dc magnetron discharge determined by means of blue diode laser absorption spectroscopy , 2005 .
[120] O. Lebedev,et al. Mechanism of preferential orientation in sputter deposited titanium nitride and yttria-stabilized zirconia layers , 2005 .
[121] E. J. Rymaszewski,et al. Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films , 2005 .
[122] S. Berg,et al. Eliminating the hysteresis effect for reactive sputtering processes , 2005 .
[123] S. Berg,et al. Fundamental understanding and modeling of reactive sputtering processes , 2005 .
[124] J. Musil,et al. Reactive magnetron sputtering of thin films: present status and trends , 2005 .
[125] I. Katardjiev,et al. TRIDYN simulation of target poisoning in reactive sputtering , 2005 .
[126] D. Güttler,et al. Mechanisms of target poisoning during magnetron sputtering as investigated by real-time in situ analysis and collisional computer simulation , 2004 .
[127] D. Depla,et al. A model for the development of biaxial alignment in yttria stabilized zirconia layers, deposited by unbalanced magnetron sputtering , 2004 .
[128] D. Depla,et al. Target poisoning during reactive magnetron sputtering: Part I: the influence of ion implantation , 2004 .
[129] D. Depla,et al. Target poisoning during reactive magnetron sputtering: Part II: the influence of chemisorption and gettering , 2004 .
[130] A. Tanaka,et al. Formulation for XPS spectral change of oxides by ion bombardment as a function of sputtering time , 2004 .
[131] Hsyi-En Cheng,et al. The effect of substrate temperature on the physical properties of tantalum oxide thin films grown by reactive radio-frequency sputtering , 2003 .
[132] S. Berg,et al. Experimental and computer simulation studies of the “baffled target” reactive sputtering process , 2003 .
[133] Fu-hui Wang,et al. Fe-doped photocatalytic TiO2 film prepared by pulsed dc reactive magnetron sputtering , 2003 .
[134] M. Wuttig,et al. Preparation and characterization of tantalum oxide films produced by reactive DC magnetron sputtering , 2003 .
[135] E. J. Rymaszewski,et al. Model relating process variables to film electrical properties for reactively sputtered tantalum oxide thin films , 2003 .
[136] A. Vollmer,et al. The characterization of TiN thin films using optical reflectivity measurements , 2002 .
[137] J. Olsson,et al. Simulation and dielectric characterization of reactive dc magnetron cosputtered (Ta2O5)1−x(TiO2)x thin films , 2002 .
[138] D. Depla,et al. Target voltage behaviour during DC sputtering of silicon in an argon/nitrogen mixture , 2002 .
[139] D. Depla,et al. Target surface condition during reactive glow discharge sputtering of copper , 2002 .
[140] M. Wuttig,et al. Characterization of Niobium Oxide Films Prepared by Reactive DC Magnetron Sputtering , 2001 .
[141] D. Depla,et al. Influence of oxygen addition on the target voltage during reactive sputtering of aluminium , 2001 .
[142] P. J. Reucroft,et al. Deposition characteristics of Ti−Si−N films reactively sputtered from various targets in a N2/Ar gas mixture , 2001 .
[143] I. Katardjiev,et al. Frequency response in pulsed DC reactive sputtering processes , 2000 .
[144] E. J. Rymaszewski,et al. Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering , 2000 .
[145] S. Berg,et al. Target compound layer formation during reactive sputtering , 1999 .
[146] Fu-hui Wang,et al. Abnormal steady states in reactive sputtering , 1999 .
[147] W. Sproul. High-rate reactive DC magnetron sputtering of oxide and nitride superlattice coatings , 1998 .
[148] Fu-hui Wang,et al. Simulations of reactive sputtering with constant voltage power supply , 1998 .
[149] S. Berg,et al. Modeling of the deposition of stoichiometric Al2O3 using nonarcing direct current magnetron sputtering , 1998 .
[150] H. Ohsaki,et al. High-rate deposition of SiO2 by modulated DC reactive sputtering in the transition mode without a feedback system , 1996 .
[151] E. Kusano,et al. Investigation of the effects of pumping speed and Ar/O2 ratio on the transient time at mode transition in Ti-O2 reactive sputtering , 1996 .
[152] A. Kanzawa,et al. Computational modeling of reactive gas modulation in radio frequency reactive sputtering , 1996 .
[153] S. Berg,et al. Hysteresis effects in the sputtering process using two reactive gases , 1995 .
[154] S. Berg,et al. Reactive sputtering using two reactive gases, experiments and computer modeling , 1993 .
[155] E. Kusano,et al. Approach to estimate gettering effects in Ti–O2 reactive sputtering process , 1992 .
[156] J. Avaritsiotis,et al. A reactive sputtering process model for symmetrical planar diode systems , 1992 .
[157] E. Kusano. An investigation of hysteresis effects as a function of pumping speed, sputtering current, and O2/Ar ratio, in Ti‐O2 reactive sputtering processes , 1991 .
[158] H. Blom,et al. Modeling of multicomponent reactive sputtering , 1991 .
[159] E. Kusano,et al. Time-dependent simulation modelling of reactivesputtering , 1990 .
[160] H. Blom,et al. The use of process modelling for optimum design of reactive sputtering processes , 1989 .
[161] H. Blom,et al. Modelling of reactive sputtering of titanium boride , 1989 .
[162] J. S. Logan,et al. High‐rate reactive sputter deposition of aluminum oxide , 1989 .
[163] A. G. Spencer,et al. The formation and control of direct current magnetron discharges for the high‐rate reactive processing of thin films , 1989 .
[164] C. Aita,et al. The transition from αZr to αZrO2 growth in sputter‐deposited films as a function of gas O2 content, rare‐gas type, and cathode voltage , 1989 .
[165] Sören Berg,et al. Process modeling of reactive sputtering , 1989 .
[166] T. Larsson. A model for reactive sputtering with magnetrons , 1989 .
[167] M. Yoshitake,et al. Effects of oxygen pressure in reactive ion beam sputter deposition of zirconium oxides , 1988 .
[168] Sören Berg,et al. A physical model for eliminating instabilities in reactive sputtering , 1988 .
[169] Sören Berg,et al. Predicting thin‐film stoichiometry in reactive sputtering , 1988 .
[170] Sören Berg,et al. Modeling of reactive sputtering of compound materials , 1987 .
[171] H. Blom,et al. The use of nitrogen flow as a deposition rate control in reactive sputtering , 1986 .
[172] A. F. Hmiel,et al. Partial pressure control of reactively sputtered titanium nitride , 1985 .
[173] M. D. Hurley,et al. Reactive sputter deposition: A quantitative analysis☆ , 1984 .
[174] R. R. Parsons,et al. Mechanisms of voltage controlled, reactive, planar magnetron sputtering of Al in Ar/N2 and Ar/O2 atmospheres , 1984 .
[175] G. Lempérière,et al. Influence of the nitrogen partial pressure on the properties of d.c.-sputtered titanium and titanium nitride films , 1984 .
[176] S. Schiller,et al. Reactive high rate D.C. sputtering: Deposition rate, stoichiometry and features of TiOx and TiNx films with respect to the target mode , 1984 .
[177] P. Ficalora,et al. The reactive sputtering of tantalum oxide: Compositional uniformity, phases, and transport mechanisms , 1983 .
[178] K. Ufert,et al. The problem of reactive sputtering and cosputtering of elemental targets , 1982 .
[179] R. R. Parsons,et al. Voltage controlled, reactive planar magnetron sputtering of AlN thin films , 1982 .
[180] S. Maniv,et al. Pressure and angle of incidence effects in reactive planar magnetron sputtered ZnO layers , 1982 .
[181] C. Miner,et al. High rate deposition of transparent conducting films by modified reactive planar magnetron sputtering of Cd2Sn alloy , 1981 .
[182] S. Maniv,et al. Surface oxidation kinetics of sputtering targets , 1980 .
[183] C. Aita,et al. The effect of O2 on reactively sputtered zinc oxide , 1980 .
[184] J. Greene,et al. Mechanisms of reactive sputtering of indium III: A general phenomenological model for reactive sputtering , 1980 .
[185] S. Maniv,et al. Discharge characteristics for magnetron sputtering of Al in Ar and Ar/O2 mixtures , 1980 .
[186] S. Schiller,et al. Reactive D.C. sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films , 1979 .
[187] J. Thornton. Substrate heating in cylindrical magnetron sputtering sources , 1978 .
[188] L. F. Donaghey,et al. Kinetics of the Reactive Sputter Deposition of Titanium Oxides , 1976 .
[189] V. Orlinov,et al. D.C. cathode sputtering: influence of the oxygen content in the gas flow on the discharge current , 1976 .
[190] T. Abe,et al. The deposition rate of metallic thin films in the reactive sputtering process , 1975 .
[191] F. Shinoki,et al. Mechanism of rf reactive sputtering , 1975 .
[192] J. Heller,et al. Reactive sputtering of metals in oxidizing atmospheres , 1973 .
[193] R. Glang,et al. Handbook of Thin Film Technology , 1970 .
[194] B. Wagner,et al. Photo-electric measurement of the work function of metals and its alteration after gas adsorption , 1963 .
[195] John C. Hecker. Scientific Foundations of Vacuum Technique. , 1962 .
[196] H. L. Johnston,et al. The Vaporization of TiN and ZrN1 , 1955 .
[197] L. Holland,et al. the properties of some reactively sputtered metal oxide films , 1953 .
[198] G. A. Veszi. The modern single-layer selenium photo-electric cell , 1953 .