论文信息 - First GaInAsP‐InP double‐heterostructure laser emitting at 1.27 μm on a silicon substrate

First GaInAsP‐InP double‐heterostructure laser emitting at 1.27 μm on a silicon substrate

We report the first successful room‐temperature GaInAsP‐InP double‐heterostructure laser emitting at 1.27 μm, grown by low‐pressure metalorganic chemical vapor deposition on a Si substrate. A pulsed threshold current density of 10 kA/cm2 at room temperature with an external quantum efficiency of 10% per facet and an output power of 20 mW (for an oxide‐defined stripe geometry with 12 μm stripe width and 250 μm cavity length) has been measured. The first aging test in pulse operation shows an increase of threshold current of only 7% for a cumulative time of 80 s at room temperature.

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