Separation of surface and bulk components in MOS-C generation rate measurements

Abstract From a survey of the MOS-C literature it is concluded that the problem of separating generation rate components, specifically separating the depletion region and lateral surface components, is either ignored or handled improperly. Herein a separation technique, the subtraction method, is introduced after considering possible alternative approaches. Detailed consideration is given to the underlying conceptual basis, advantages, and limitations of the technique. Finally, sample experimental results derived from both annealed and unannealed structures are presented primarily to illustrate the subtraction method procedure.

[1]  Yasuo Kano,et al.  On the Determination of Minority Carrier Lifetime and Surface Recombination Velocity from the Transient Response of MOS Capacitors , 1972 .

[2]  H. Fu,et al.  Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface states , 1972 .

[3]  D. K. Schroder,et al.  On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor , 1970 .

[4]  R. Poirier,et al.  Experimental study of semiconductor surface conductivity , 1966 .

[5]  R. Pierret,et al.  Effects of lateral surface generation on the MOS-C linear-sweep and C-t transient characteristics , 1973 .

[6]  P. Tománek.  Measuring the lifetime of minority carriers in MIS structures , 1969 .

[7]  R. Pierret,et al.  A modified linear sweep technique for MOS-C generation rate measurements , 1975, IEEE Transactions on Electron Devices.

[8]  S. R. Hofstein.  Minority carrier lifetime determination from inversion layer transient response , 1967 .

[9]  R. Poirier,et al.  Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance method , 1966 .

[10]  H. Fu,et al.  Current and capacitance transient responses of MOS capacitor. II. Recombination centers in the surface space charge layer , 1972 .

[11]  R. Pierret,et al.  A linear-sweep MOS-C technique for determining minority carrier lifetimes , 1972 .

[13]  D. K. Schroder,et al.  Interpretation of surface and bulk effects using the pulsed MIS capacitor , 1971 .

[14]  F. P. Heiman,et al.  On the determination of minority carrier lifetime from the transient response of an MOS capacitor , 1967 .

[15]  T. Collins,et al.  Exact modeling of the transient response of an MOS capacitor , 1975, IEEE Transactions on Electron Devices.