Characteristics and transport mechanisms of triple switching regimes of TaOx memristor

While tantalum oxide (TaOx) memristors have shown superior multilevel switching performances and emerged as one of the leading candidates for analog memory and neuromorphic applications, its microscopic switching mechanisms at different resistance regimes remain obscure. In this work, electron transport mechanisms of TaOx memristors have been revealed by analyzing transport characteristics in three different resistance switching regimes. A quantum point contact model coupled with a first principles calculation has been validated to account for different conduction behaviors, which further sheds light on the evolution of the conducting filaments during switching processes. The high endurance observed in the low resistance switching regime is rationalized based on the observation of an enhanced instability and noise in the presence of a single conduction channel, i.e., quantum conductance G0=2e2/h.

[1]  L. Chua.  Resistance switching memories are memristors , 2011, Handbook of Memristor Networks.

[2]  Chaoxing Wu,et al.  Mimicking Classical Conditioning Based on a Single Flexible Memristor , 2017, Advanced materials.

[3]  J. Yang,et al.  Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. , 2017, Nature materials.

[4]  Byung Joon Choi,et al.  High‐Speed and Low‐Energy Nitride Memristors , 2016 .

[5]  Qiangfei Xia,et al.  Electrochemical metallization switching with a platinum group metal in different oxides. , 2016, Nanoscale.

[6]  J. Yang,et al.  Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor , 2016, Scientific Reports.

[7]  J. Joshua Yang,et al.  Synaptic electronics and neuromorphic computing , 2016, Science China Information Sciences.

[8]  Feng Miao,et al.  Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors , 2016, Nature Communications.

[9]  John Paul Strachan,et al.  Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors. , 2016, Advanced materials.

[10]  R. Waser,et al.  Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems. , 2016, Nature nanotechnology.

[11]  I. Valov,et al.  Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices , 2015, Advanced materials.

[12]  Jeonghwan Song,et al.  Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application , 2015 .

[13]  Satoshi Watanabe,et al.  Oxygen vacancy effects on an amorphous-TaOx-based resistance switch: a first principles study. , 2014, Nanoscale.

[14]  M. Marinella,et al.  Isothermal Switching and Detailed Filament Evolution in Memristive Systems , 2014, Advanced materials.

[15]  L. Perniola,et al.  Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices , 2014 .

[16]  Wei Lu,et al.  Random telegraph noise and resistance switching analysis of oxide based resistive memory. , 2014, Nanoscale.

[17]  Zhiping Yu,et al.  Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier Layer , 2014, IEEE Electron Device Letters.

[18]  M. Marinella,et al.  Electrical conductivity in oxygen-deficient phases of tantalum pentoxide from first-principles calculations , 2013 .

[19]  J. Yang,et al.  State Dynamics and Modeling of Tantalum Oxide Memristors , 2013, IEEE Transactions on Electron Devices.

[20]  C. Cagli,et al.  Quantum-size effects in hafnium-oxide resistive switching , 2013 .

[21]  Jan van den Hurk,et al.  Nanobatteries in redox-based resistive switches require extension of memristor theory , 2013, Nature Communications.

[22]  T. Takagi,et al.  Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current , 2013, IEEE Transactions on Electron Devices.

[23]  J Joshua Yang,et al.  Memristive devices for computing. , 2013, Nature nanotechnology.

[24]  X. Cartoixà,et al.  Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO 2 /metal structures , 2012 .

[25]  Hiroshi Iwai,et al.  Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices , 2012 .

[26]  Christofer Toumazou,et al.  Two centuries of memristors. , 2012, Nature materials.

[27]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[28]  J. Yang,et al.  Continuous electrical tuning of the chemical composition of TaO(x)-based memristors. , 2012, ACS nano.

[29]  J. Yang,et al.  Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor , 2011, Advanced materials.

[30]  Z. Wei,et al.  Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model , 2011, 2011 International Electron Devices Meeting.

[31]  Wei Lu,et al.  Short-term Memory to Long-term Memory Transition in a Nanoscale Memristor , 2022 .

[32]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[33]  Matthew D. Pickett,et al.  Two‐ and Three‐Terminal Resistive Switches: Nanometer‐Scale Memristors and Memistors , 2011 .

[34]  M. Kozicki,et al.  Electrochemical metallization memories—fundamentals, applications, prospects , 2011, Nanotechnology.

[35]  John Paul Strachan,et al.  Spectromicroscopy of tantalum oxide memristors , 2011 .

[36]  J. Yang,et al.  Metal/TiO2 interfaces for memristive switches , 2011 .

[37]  J. Yang,et al.  High switching endurance in TaOx memristive devices , 2010 .

[38]  Yoshio Nishi,et al.  Electronic correlation effects in reduced rutile TiO 2 within the LDA+U method , 2010 .

[39]  E. Miranda,et al.  Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions , 2010, IEEE Electron Device Letters.

[40]  T. Hasegawa,et al.  Learning Abilities Achieved by a Single Solid‐State Atomic Switch , 2010, Advanced materials.

[41]  Wei Yang Lu,et al.  Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.

[42]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.

[43]  C. Gamrat,et al.  An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse , 2009, 0907.2540.

[44]  L. Goux,et al.  Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments , 2010, 2010 International Electron Devices Meeting.

[45]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[46]  Z. Wei,et al.  Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism , 2008, 2008 IEEE International Electron Devices Meeting.

[47]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[48]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .

[49]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[50]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[51]  D. Vanderbilt,et al.  First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide , 2002, cond-mat/0202454.

[52]  D. Sánchez-Portal,et al.  The SIESTA method for ab initio order-N materials simulation , 2001, cond-mat/0104182.

[53]  E. Kandel.  The Molecular Biology of Memory Storage: A Dialogue Between Genes and Synapses , 2001, Science.

[54]  J. Sune,et al.  Post soft breakdown conduction in SiO/sub 2/ gate oxides , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[55]  M. Nafria,et al.  Point contact conduction at the oxide breakdown of MOS devices , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[56]  U. Landman,et al.  Nonlinear magnetoconductance of nanowires , 1997 .

[57]  Büttiker,et al.  Quantized transmission of a saddle-point constriction. , 1990, Physical review. B, Condensed matter.

[58]  H. Monkhorst,et al.  SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS , 1976 .

[59]  L.O. Chua,et al.  Memristive devices and systems , 1976, Proceedings of the IEEE.

[60]  L. Chua.  Memristor-The missing circuit element , 1971 .

[61]  R. S. Roth,et al.  The crystal structure of the high temperature form of Ta2O5 , 1971 .

[62]  A. Reisman,et al.  Reactions of the Group VB Pentoxides with Alkali Oxides and Carbonates. III. Thermal and X-Ray Phase Diagrams of the System K2O or K2CO3 with Ta2O5 , 1956 .