A 500-megabyte/s data-rate 4.5 M DRAM

A 512-kb*9 DRAM with a 500-Mbyte/s data transfer rate was developed. This high data rate was achieved by designing a DRAM core with a very high internal column bandwidth, and coupling this core with a block-oriented, small-swing, synchronous interface that uses skew-canceling clocks. The DRAM has a 1-kbyte*2-line sense-amp cache and is assembled in a 32-pin vertical surface-mount-type plastic package. The measurement results clearly verified the 500-Mbyte/s data rate. >