论文信息 - A 2–22 GHz wideband active bi-directional power divider/combiner in 130 nm SiGe BiCMOS technology

A 2–22 GHz wideband active bi-directional power divider/combiner in 130 nm SiGe BiCMOS technology

An active bi-directional power dividier/combiner circuit based on a distributed topology is proposed. The use of bi-directional amplifiers (BDAs) provides both dividing and combining functions within the same circuit. By utilizing a distributed topology composed of BDAs and artificial transmission lines, a wide operational bandwidth (2-22 GHz) and a large, flat power gain (9 dB) were achieved under DC power consumption of 100 mW. The maximum amplitude and phase imbalances were 0.7 dB and 3°, respectively.

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