A modified general model for sic power MOSFET in rail transportation application

A compact behavioral model for SiC power MOSFET is proposed. By applying more degrees of freedom in the channel current expression, removing the drift resistance and rectifying junction capacitance mathematical model, the proposed model can accurately reproduces those static and dynamic characteristics in datasheet. The convergence problem of original model is solved and less simulation time is needed. Moreover, the model was promoted to simulate 1200V/300A power module, which is suitable for rail transportation application.

[1]  H. Alan Mantooth,et al.  Datasheet Driven Silicon Carbide Power MOSFET Model , 2014, IEEE Transactions on Power Electronics.

[2]  H. Mantooth,et al.  Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence , 2003 .

[3]  Daniel Johannesson,et al.  Analytical PSpice model for SiC MOSFET based high power modules , 2016, Microelectron. J..

[4]  V. Sala,et al.  Power converters and its application in electric traction systems. Analysis Present and Future Technologies , 2016, IEEE Latin America Transactions.

[5]  Daniel Johannesson,et al.  Assessment of PSpice model for commercial SiC MOSFET power modules , 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

[6]  Jun Wang,et al.  Characterization, Modeling, and Application of 10-kV SiC MOSFET , 2008, IEEE Transactions on Electron Devices.

[7]  Stephen B. Bayne,et al.  Fast and accurate electro-thermal behavioral model of a commercial SiC 1200V, 80 mΩ power MOSFET , 2015, 2015 IEEE Pulsed Power Conference (PPC).

[8]  Liqiang Yuan,et al.  The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET , 2015, IEEE Transactions on Electron Devices.

[9]  L. Tolbert,et al.  Temperature dependent Pspice model of silicon carbide power MOSFET , 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[10]  Shuhei Nakata,et al.  3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter , 2014 .

[11]  Dario Zaninelli,et al.  Application prospective of Silicon Carbide (SiC) in railway vehicles , 2014, 2014 AEIT Annual Conference - From Research to Industry: The Need for a More Effective Technology Transfer (AEIT).

[12]  Robert W. Erickson,et al.  Fundamentals of Power Electronics , 2001 .

[13]  Krishna Shenai,et al.  Simple and Accurate Circuit Simulation Model for SiC Power MOSFETs , 2015, IEEE Transactions on Electron Devices.

[14]  Zheyu Zhang.  Characterization and Realization of High Switching-speed Capability of SiC Power Devices in Voltage Source Converter , 2015 .

[15]  A. Mantooth,et al.  Power SiC DMOSFET Model Accounting for Nonuniform Current Distribution in JFET Region , 2012, IEEE Transactions on Industry Applications.