A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology

A MOS-NDR (negative differential resistance) transistor which is composed of four n-channel metal–oxide–semiconductor field effect transistors (nMOSFETs) is fabricated in standard 0.35 μm CMOS technology. This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD (resonant tunneling diode) in current–voltage characteristics. At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor, a flexible logic circuit is realized in this work, which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor. It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.

[1]  Pinaki Mazumder,et al.  A prototyping technique for large-scale RTD-CMOS circuits , 2000, 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353).

[2]  Tae-Ho Kim,et al.  A 45 mW RTD/HBT MOBILE D-Flip Flop IC Operating up to 32 Gb/s , 2006, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.

[3]  H.J. De Los Santos,et al.  Physics-based RTD current-voltage equation , 1996, IEEE Electron Device Letters.

[4]  Shih-Yu Wang,et al.  Logic circuit design based on MOS-NDR devices and circuits fabricated by CMOS process , 2005, Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05).

[5]  Pinaki Mazumder,et al.  Digital circuit applications of resonant tunneling devices , 1998, Proc. IEEE.

[6]  Koichi Maezawa,et al.  Monostable-Bistable Transition Logic Elements(MOBILEs) Based on Monolithic Integration of Resonant Tunneling Diodes and FETs. , 1995 .

[7]  Werner Prost,et al.  Parallel Adder Design with Reduced Circuit Complexity Using Resonant Tunneling Transistors and Threshold Logic , 2000 .

[8]  Suh-Yuh Yang,et al.  Wave propagation in RTD-based cellular neural networks , 2004 .

[9]  Pinaki Mazumder,et al.  Monolithically integrated InP-based minority logic gate using an RTD/HBT heterostructure , 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

[10]  Wei Wang,et al.  CMOS-NDR transistor , 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.