论文信息 - Significance of the channeling surface peak in thin‐film analysis

Significance of the channeling surface peak in thin‐film analysis

The surface scattering of MeV He+ ions channeled along Si〈100〉 from clean well‐characterized Si(100) surfaces is measured. The surface peak intensity, along with other values in the literature, is shown to obey simple scaling laws. For the study of very thin films by backscattering the contribution made by this surface scattering can be important.

L. Feldman | R. Kauffman | R. Zuhr | P. Silverman

[1] L. Feldman,et al. Surface Scattering from W Single Crystals by MeV He + Ions , 1977 .

[2] G. G. Bentini,et al. Analysis of surface layers by the channeling technique: Beam energy dependence , 1975 .

[3] T. Sigmon,et al. Stoichiometry of thin silicon oxide layers on silicon , 1974 .

[4] J. H. Barrett. MONTE CARLO CHANNELING CALCULATIONS. , 1971 .

[5] L. Feldman,et al. Comparison of Average-Potential Models and Binary-Collision Models of Axial Channeling and Blocking , 1970 .

[6] B. Batterman,et al. Vibrational Amplitudes in Germanium and Silicon , 1962 .

[7] H. E. Farnsworth,et al. Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon , 1959 .