10μm pitch design of HgCdTe diode array in Sofradir
暂无分享,去创建一个
Laurent Rubaldo | Rachid Taalat | Jocelyn Berthoz | Nicolas Péré-Laperne | Alexandre Kerlain | Loïc Dargent | Emmanuel Carrère | R. Taalat | L. Rubaldo | L. Dargent | A. Kerlain | J. Berthoz | N. Péré-Laperne | E. Carrère
[1] J. Schmit,et al. Calculation of intrinsic carrier concentration in Hg1−xCdxTe , 1983 .
[2] O. Gravrand,et al. Latest developments in the p-on-n HgCdTe architecture at DEFIR , 2014, Defense + Security Symposium.
[3] Enrico Bellotti,et al. Physics-based simulation of the modulation transfer function in HgCdTe infrared detector arrays. , 2013, Optics letters.
[4] Laurent Rubaldo,et al. MTF performance: measurements, modelisation, and optimization for Sofradir II-VI IR photodetectors , 2015, SPIE OPTO.
[5] Majid Zandian,et al. MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by “Rule 07”, a Very Convenient Heuristic , 2008 .
[6] Eric de Borniol,et al. Small pixel pitch solutions for active and passive imaging , 2012, Defense + Commercial Sensing.
[7] G. Destefanis,et al. Electrical doping of HgCdTe by ion implantation and heat treatment , 1988 .
[8] K. Ng,et al. The Physics of Semiconductor Devices , 2019, Springer Proceedings in Physics.
[9] P. K. Liao,et al. Minority carrier lifetime in p-HgCdTe , 2005 .
[10] Y. Reibel,et al. Getting small: new 10μm pixel pitch cooled infrared products , 2014, Defense + Security Symposium.
[11] Michael A. Kinch. The rationale for ultra-small pitch IR systems , 2014, Defense + Security Symposium.