General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design
暂无分享,去创建一个
P. Hubík | A. Hospodková | T. Hubáček | J. Pangrác | E. Hulicius | Z. Gedeonová | K. Kuldová | F. Hájek
[1] H. Chiu,et al. Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates , 2020 .
[2] Zhicheng Dai,et al. Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer , 2019, Electronics.
[3] Yongjo Park,et al. A new growth method of semi-insulating GaN layer for HEMT structure by eliminating degenerate layer at GaN/sapphire interface , 2015 .
[4] M. Shimizu,et al. High‐quality GaN film and AlGaN/GaN HEMT grown on 4‐inch Si(110) substrates by MOCVD using an ultra‐thin AlN/GaN superlattice interlayer , 2015 .
[5] M. Laügt,et al. Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE , 2005 .
[6] P. Hubík,et al. Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design , 2021 .