论文信息 - General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design

General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design

GaN-based nanostructures are used for many present semiconductor devices. The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and detectors as well as High Electron Mobility Transistors (HEMT). Several of our previous NANOCON contributions were devoted to the scintillator and detector structures; one was a description of optimization of HEMT structures and their growth parameters.

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[6] P. Hubík,et al. Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design , 2021 .