论文信息 - Integration of an injection laser with a Gunn oscillator on a semi‐insulating GaAs substrate

Integration of an injection laser with a Gunn oscillator on a semi‐insulating GaAs substrate

The integration of an injection semiconductor laser with an active electronic device (Gunn oscillator) in a single epitaxial crystal device is demonstrated.

[1] A. Yariv,et al. GaAs‐GaAlAs injection lasers on semi‐insulating substrates using laterally diffused junctions , 1978 .

[2] C. A. Liechti,et al. Microwave Field-Effect Transistors--1976 , 1976 .

[3] Double‐heterostructure GaAs‐GaAlAs injection lasers on semi‐insulating substrates using carrier crowding , 1977 .

[4] P. Tien. Integrated optics and new wave phenomena in optical waveguides , 1977 .

[5] L. Tarricone,et al. Low‐resistivity ZnCdS films for use as windows in heterojunction solar cells , 1978 .

[6] K. Mause,et al. Gunn device gigabit rate digital microcircuits , 1975 .