Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors

We fabricated Pt∕NiO∕Pt capacitor structures with various bottom electrode thicknesses tBE and investigated their resistance switching behaviors. The capacitors with tBE⩾50nm exhibited typical unipolar resistance memory switching, while those with tBE⩽30nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner tBE makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory.

[1]  B. Kahng,et al.  Random Circuit Breaker Network Model for Unipolar Resistance Switching , 2008 .

[2]  S. Seo,et al.  Structural Properties and Resistance-Switching Behavior of Thermally Grown NiO Thin Films , 2008 .

[3]  H. Akinaga,et al.  Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution , 2007, cond-mat/0702564.

[4]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[5]  Y. Chang,et al.  Time-resolved visualization of the heat flow in VO2∕Al2O3 films , 2007 .

[6]  K. Kinoshita,et al.  Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model , 2007 .

[7]  Jong-Wan Park,et al.  Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications , 2006 .

[8]  Sung-Sil Cho,et al.  Study on the resistive switching time of TiO2 thin films , 2006 .

[9]  Tow Chong Chong,et al.  Phase change random access memory cell with superlattice-like structure , 2006 .

[10]  S. H. Kim,et al.  Conductivity switching characteristics and reset currents in NiO films , 2005 .

[11]  S. Seo,et al.  Reproducible resistance switching in polycrystalline NiO films , 2004 .

[12]  A. Sawa,et al.  Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface , 2004, cond-mat/0409657.

[13]  S. Q. Liu,et al.  Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .

[14]  D. Lide.  Handbook of Chemistry and Physics , 1992 .

[15]  R. C. Weast.  CRC Handbook of Chemistry and Physics , 1973 .

[16]  D. Morgan,et al.  Electrical phenomena in amorphous oxide films , 1970 .

[17]  G. A. Slack,et al.  Thermal Conductivity of MnO and NiO , 1958 .