Plasma charging damage on ultrathin gate oxides
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[1] C. Viswanathan,et al. Plasma-damaged oxide reliability study correlating both hot-carrier injection and time-dependent dielectric breakdown , 1993, IEEE Electron Device Letters.
[2] C. Hu. Gate oxide scaling limits and projection , 1996 .
[3] D.L. Kwong,et al. Gate oxide thickness dependence of RIE-induced damages on n-channel MOSFET reliability , 1996, Proceedings of International Reliability Physics Symposium.
[4] Chenming Hu,et al. Monitoring plasma-process induced damage in thin oxide , 1993 .
[5] K. Noguchi,et al. Modeling oxide thickness dependence of charging damage by plasma processing , 1993, IEEE Electron Device Letters.
[6] O. Awadelkarim,et al. Degradation of submicron N-channel MOSFET hot electron reliability due to edge damage from polysilicon gate plasma etching , 1994, IEEE Electron Device Letters.
[7] Donggun Park,et al. Reliability of thin SiO/sub 2/ at direct-tunneling voltages , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[8] C. Hu,et al. Thin oxide charging current during plasma etching of aluminum , 1991, IEEE Electron Device Letters.
[9] Charvaka Duvvury,et al. Trends for deep submicron VLSI and their implications for reliability , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.