Electrical and photoelectric properties of transparent Li-doped ZnO/ZnO homojunctions by pulsed laser deposition

[1]  Gary J. Cheng,et al.  Room temperature deposition of alumina-doped zinc oxide on flexible substrates by direct pulsed laser recrystallization , 2012 .

[2]  Gary J. Cheng,et al.  Highly conductive and transparent alumina-doped ZnO films processed by direct pulsed laser recrystallization at room temperature , 2011 .

[3]  Y. Yoon,et al.  Ohmic contact between ZnO and Pt by InSb layer in a ZnO Schottky diode , 2011 .

[4]  J. Perrière,et al.  Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates , 2011 .

[5]  L. Chernyak,et al.  ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection , 2011 .

[6]  T. Ikegami,et al.  Development of thickness measurement program for transparent conducting oxide thin films , 2010 .

[7]  David C. Look,et al.  Highly conductive ZnO grown by pulsed laser deposition in pure Ar , 2010 .

[8]  Y. Tsai,et al.  Fluorine-doped ZnO transparent conducting thin films prepared by radio frequency magnetron sputtering , 2010 .

[9]  Junying Zhang,et al.  Effects of atomic oxygen treatment on structures, morphologies and electrical properties of ZnO:Al films , 2010 .

[10]  A. Janotti,et al.  Native point defects in ZnO , 2007 .

[11]  F. Zhuge,et al.  Electrical characterization of ZnO-based homojunctions , 2006 .

[12]  L. J. Mandalapu,et al.  p-type behavior from Sb-doped ZnO heterojunction photodiodes , 2006 .

[13]  H. Morkoç,et al.  A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES , 2005 .

[14]  F. Zhuge,et al.  ZnO p-n homojunctions and ohmic contacts to Al-N-co-doped p-type ZnO , 2005 .

[15]  Y. Ikuhara,et al.  Control of point defects and grain boundaries in advanced materials: Optical properties and diffusion induced by Li doping in ZnO , 2005 .

[16]  E. Dalchiele,et al.  Bandgap energy tuning of electrochemically grown ZnO thin films by thickness and electrodeposition potential , 2004 .

[17]  David P. Norton,et al.  p-type behavior in phosphorus-doped (Zn,Mg)O device structures , 2004 .

[18]  L. Yanhong,et al.  A Study of Quantum Confinement Properties of Photogenerated Charges in ZnO Nanoparticles by Surface Photovoltage Spectroscopy , 2004 .

[19]  Hideo Hosono,et al.  Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO , 2003 .

[20]  A. Draeseke,et al.  p-Type transparent thin films of CuY1−xCaxO2 , 2001 .

[21]  L. Kronik,et al.  Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering , 2001 .

[22]  H. Hosono,et al.  Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors , 1999 .

[23]  William R. Patterson,et al.  Blue‐green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells , 1991 .

[24]  E. Burstein Anomalous Optical Absorption Limit in InSb , 1954 .