Model of Pocket-Implant Mosfets for Circuit Simulation

A new threshold voltage (Vth) model has been developed for the pocket-implant technology. The model extracts the threshold condition from the entire mobile charge concentration in the channel with only two parameters; the maximum doping concentration (N su h p ) of the pocket profile and the penetration length (L o ) into the channel. The model reproduces the measured Vth vs. gate-length (Lgate) characteristics with an average error of a few mV under any bias conditions.