Nitride nanowire structures for LED applications

This paper discusses some of the advantages of nanowire structures for use in LEDs as well as the challenges that need to be overcome towards the realisation of real-world devices. Our experimental results pertain to group-III nitride nanowire structures grown by MBE. We present clear evidence that the catalyst-free growth approach on Si yields best results with respect to structural and optical material properties. We elucidate the mechanism of nanowire nucleation and the factors determining the initial nanowire diameter, discuss the issue of InGaN growth in small-diameter nitride nanowires and review the results reported for nanowire-based group-III nitride LEDs reported so far.

[1]  K. Kishino,et al.  InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate , 2004 .

[2]  M. Mori,et al.  Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy , 1997 .

[3]  L. Geelhaar,et al.  Different growth rates for catalyst-induced and self-induced GaN nanowires , 2010 .

[4]  S. Reitzenstein,et al.  Direct comparison of catalyst-free and catalyst-induced GaN nanowires , 2010 .

[5]  David C. Look,et al.  Comment on: Recombination of excitons bound to oxygen and silicon donors in freestanding GaN , 2002 .

[6]  Zetian Mi,et al.  High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si"111… , 2010 .

[7]  R. Beresford,et al.  The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1) , 1998 .

[8]  Oliver Brandt,et al.  Collector phase transitions during vapor-solid-solid nucleation of GaN nanowires. , 2010, Nano letters.

[9]  James R Chelikowsky,et al.  Self-purification in semiconductor nanocrystals. , 2006, Physical review letters.

[10]  T. Schumann,et al.  Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer , 2011, Nanotechnology.

[11]  V. Consonni,et al.  Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius , 2010 .

[12]  S. Gwo,et al.  InGaN/GaN nanorod array white light-emitting diode , 2010 .

[13]  P. Gilet,et al.  GaN‐based nanowires: From nanometric‐scale characterization to light emitting diodes , 2010 .

[14]  H. Lüth,et al.  Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy. , 2007, Nano letters.

[15]  O. Brandt,et al.  Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons , 2010 .

[16]  Walter M. Weber,et al.  Axial and radial growth of Ni-induced GaN nanowires , 2007 .

[17]  Mei-Ling Kuo,et al.  Large enhancement of light-extraction efficiency from optically pumped, nanorod light-emitting diodes. , 2009, Optics letters.

[18]  Hiroto Sekiguchi,et al.  Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays , 2009 .

[19]  V. Consonni,et al.  In situ analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires , 2010, Nanotechnology.

[20]  Hiroto Sekiguchi,et al.  Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate , 2010 .

[21]  Oliver Brandt,et al.  Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit , 2010 .