Reliability study of retention and memory gate integrity in a 1K MNOS RAM

The reliability of a 1K MNOS RAM with regards to retention and nitride gate integrity has been demonstrated. Over 400 devices were screened and life tested to demonstrate 0.999 reliability during device life. The device was a 1K MNOS memory used in a RAM application with an erase/write cycle of 32 microseconds and a life specification of 1E7 cycles.