A 94 GHz low noise GaAs FET oscillator using whispering-gallery dielectric resonator modes and a new push-push configuration reducing 1/f converted noise

Results obtained in the design of a 47-94 GHz GaAs MESFET oscillator-doubler using a dielectric resonator are presented. A push-push configuration was used for the generation of the fundamental frequency at 47 GHz in the FET drain at the output. This topology produces noiseless oscillators-doublers. Two versions of this circuit were manufactured: the first used a TE/sub 01 delta /-mode cylindrical dielectric resonator. The resonator dimensions were calculated by computer or a fundamental frequency at 47 GHz. The second used planar whispering-gallery modes. The results obtained from the prototypes are presented. It is felt these devices show promise for low-noise millimeter-wave use.<<ETX>>