Pulsed laser deposition with a high average power free electron laser: Benefits of subpicosecond pulses with high repetition rate

We have conducted experiments exploring pulsed laser deposition of thin films using the high average power Thomas Jefferson National Accelerator Facility Free Electron Laser. The combination of parameters of this laser, including subpicosecond pulses, high average power, high repetition rate, and tunability, makes it a unique tool for the study of the effects of laser characteristics on thin-film quality. When compared to ablation and deposition with an ultrafast, high energy per pulse, low repetition rate laser (amplified Ti:sapphire), we find that the lower energy per pulse with high repetition rate of the free electron laser leads to very different plasma emission and produces films with high quality with the potential of very high deposition rates. This is demonstrated in the optical spectroscopy of plasma emission from Ti and the growth of Ni80Fe20 thin films.