CMOS compatible metal-insulator-metal plasmonic perfect absorbers

We report the design, fabrication and characterization of CMOS compatible metal-insulator-metal (MIM) plasmonic resonators made of tungsten and silicon nitride for the mid-infrared range. These structures give rise to spectrally selective emission/absorption, which is of particular interest in the field of non-dispersive infrared (NDIR) gas spectroscopy. In this paper, we demonstrate large scale fabrication on 200 mm silicon wafer of such devices, and show some of their main characteristics, such as tunability, multi-spectral sources, polarization-independance and consistency between reflectivity and emissivity measurements.

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