Design method of NOR-type comparison circuit in CAM with ground bounce noise considerations

CAM devices generate excessive and simultaneous current through NOR circuits during a comparison operation because of the parallel comparisons for all bits in the CAM. The ground bounce noise can be severe due to the parasitic inductance in the paths to the system ground, such as the metal lines in the CAM power structure, package pins, and system board. The ground bounce noise can cause subtle failures unless carefully considered as a key design parameter. The simultaneous current largely depends on the number of stored bits matching compared data. Traditionally, the NOR circuit in the CAM is perceived to respond faster when the transistors to the ground path in the circuit are active. However, this work shows that this notion can be greatly misleading when the ground bounce effects are not considered. The design method of the comparison cells is newly proposed to meet the optimal CAM evaluation time by simultaneously considering operational speed, extreme case analyses of the NOR circuit, and ground bounce noises. The proposed design method effectively provided the optimal design decision, which could be otherwise misleading if no ground bounce effect is considered. We demonstrated in sample designs that the proper choice of comparison-cell size reduced evaluation time by 54.9% while reducing comparison-cell size by 57.1% when ground bounce effects were considered.

[1]  Tegze P. Haraszti CMOS Memory Circuits , 2000 .

[2]  Patrik Larsson,et al.  di/dt Noise in CMOS Integrated Circuits , 1997 .

[3]  Robert Michael Owens,et al.  Modeling the effect of ground bounce on noise margin , 1994, Proceedings., International Test Conference.

[4]  A. Kabbani,et al.  Estimation of ground bounce effects on CMOS circuits , 1999 .

[5]  Hisatada Miyatake,et al.  A design for high-speed low-power CMOS fully parallel content-addressable memory macros , 2001 .

[6]  Vincent Anthony Mabert,et al.  Tutorial and Survey , 1972 .

[7]  Sanghyeon Baeg Low-Power Ternary Content-Addressable Memory Design Using a Segmented Match Line , 2008, IEEE Transactions on Circuits and Systems I: Regular Papers.

[8]  Melvin A. Breuer,et al.  Analysis of ground bounce in deep sub-micron circuits , 1997, Proceedings. 15th IEEE VLSI Test Symposium (Cat. No.97TB100125).

[9]  K. Pagiamtzis,et al.  Content-addressable memory (CAM) circuits and architectures: a tutorial and survey , 2006, IEEE Journal of Solid-State Circuits.

[10]  G. Kasai,et al.  200MHz/200MSPS 3.2W at 1.5V Vdd, 9.4Mbits ternary CAM with new charge injection match detect circuits and bank selection scheme , 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..

[11]  Massoud Pedram,et al.  Ground bounce in digital VLSI circuits , 2003, IEEE Trans. Very Large Scale Integr. Syst..

[12]  K. Pagiamtzis,et al.  A low-power content-addressable memory (CAM) using pipelined hierarchical search scheme , 2004, IEEE Journal of Solid-State Circuits.

[13]  Igor Arsovski,et al.  Low-noise embedded CAM with reduced slew-rate match-lines and asynchronous search-lines , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..