J-ramp on sub-3 nm dielectrics: noise as a breakdown criterion

An alternate criterion of failure for very thin oxides is proposed that can reliably detect the occurrence of both soft breakdown and hard breakdown during accelerated stress tests. We show that an increase in current noise that occurs at oxide breakdown can be detected rapidly with commercial test equipment, even when no discernable voltage drop can be observed. As an initial test vehicle for implementation of a noise test, we chose the JEDEC standard J-ramp test. This test can be implemented with very minor software changes and can detect both hard and soft breakdowns for 2-6 nm oxides.

[1]  Tanya Nigam,et al.  Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides , 1997 .

[2]  K. N. Dollman,et al.  - 1 , 1743 .

[3]  D. Hwang,et al.  Ultra-thin gate dielectrics: they break down, but do they fail? , 1997, International Electron Devices Meeting. IEDM Technical Digest.