Temperature dependence of Si-GaAs energy gap using photoconductivity spectra

Abstract In the present work, we study the Energy gap ( E g ) of the Si–GaAs at various temperatures in the range from 250 up to 350 K, using the photoconductivity method, in order to find the relation between the E g and the temperature. We have measured the photocurrent as a function of photon energy from 1.36 up to 1.55 eV for each temperature. From the analysis of the spectra for each temperature we have found three peaks corresponding to inter-band transitions and we plotted the energy that corresponds to the peaks as a function of temperature.