Electrical characteristics of GS-TSV in slow wave mode

The electrical characteristics of signal-ground through-silicon-via (GS-TSV) in slow-wave mode are analyzed according to microwave theory and simulated by ADS software. The results show that with the increasing radius of TSV, the transmission characteristic is getting better and better, however, with increasing height of TSV, the transmission characteristic of TSV becomes worse within the range from 0 to 15GHz.

[1]  Rashid Rashidzadeh,et al.  TSV Extracted Equivalent Circuit Model and an On-Chip Test Solution , 2016, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[2]  Seungyoung Ahn,et al.  An Improved 100 GHz Equivalent Circuit Model of a Through Silicon Via With Substrate Current Loop , 2016, IEEE Microwave and Wireless Components Letters.

[3]  Yintang Yang,et al.  Effectiveness of $p +$ Layer in Mitigating Substrate Noise Induced by Through-Silicon Via for Microwave Applications , 2016, IEEE Microwave and Wireless Components Letters.

[4]  Joungho Kim,et al.  Through Silicon Via (TSV) Defect Modeling, Measurement, and Analysis , 2017, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[5]  Joungho Kim,et al.  Through-Silicon Via Capacitance–Voltage Hysteresis Modeling for 2.5-D and 3-D IC , 2017, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[6]  M. Swaminathan,et al.  Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects , 2015, IEEE Transactions on Electromagnetic Compatibility.

[7]  H. Reichl,et al.  High-Frequency Modeling of TSVs for 3-D Chip Integration and Silicon Interposers Considering Skin-Effect, Dielectric Quasi-TEM and Slow-Wave Modes , 2011, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[8]  Tzong-Lin Wu,et al.  Accuracy-improved through-silicon-via model using conformal mapping technique , 2011, 2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems.

[9]  Yintang Yang,et al.  Low-Loss Air-Cavity Through-Silicon Vias (TSVs) for High Speed Three-Dimensional Integrated Circuits (3-D ICs) , 2016, IEEE Microwave and Wireless Components Letters.

[10]  Yinshui Xia,et al.  Study on Transmission Characteristics of Carbon Nanotube Through Silicon Via Interconnect , 2014, IEEE Microwave and Wireless Components Letters.

[11]  Yinshui Xia,et al.  Electrical Modeling and Analysis of a Mixed Carbon Nanotube Based Differential Through Silicon via in 3-D Integration , 2016, IEEE Transactions on Nanotechnology.

[12]  Yintang Yang,et al.  Metal Proportion Optimization of Annular Through-Silicon via Considering Temperature and Keep-Out Zone , 2015, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[13]  S. R. Narasimhan,et al.  Modeling of Crosstalk in Through Silicon Vias , 2013, IEEE Transactions on Electromagnetic Compatibility.