Field-plated 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs with varying field-plate length
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Guang Chen | I. Adesida | V. Kumar | I. Adesida | V. Kumar | Shiping Guo
[1] P. Saunier,et al. Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates , 2004 .
[2] P. Janke,et al. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE , 2000 .
[3] R. J. Shul,et al. GAN : PROCESSING, DEFECTS, AND DEVICES , 1999 .
[4] Y. Okamoto,et al. 10-W/mm AlGaN-GaN HFET with a field modulating plate , 2003, IEEE Electron Device Letters.
[5] D. Wong,et al. Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications , 2005, IEEE Electron Device Letters.
[6] Umesh K. Mishra,et al. 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate , 2004 .
[7] Paul Saunier,et al. Effects of AlGaN/GaN HEMT structure on RF reliability , 2005 .
[8] Ilesanmi Adesida,et al. Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN , 2002 .
[9] U. Mishra,et al. 30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.
[10] K. Doverspike,et al. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates , 1999, IEEE Electron Device Letters.
[11] H. Kim,et al. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs , 2001, IEEE Electron Device Letters.
[12] V. Kaper,et al. Performance of the AlGaN HEMT structure with a gate extension , 2004, IEEE Transactions on Electron Devices.
[13] Ilesanmi Adesida,et al. AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise , 2001 .