Radiation-Hardened Sensor Interface Circuit for Monitoring Severe Accidents in Nuclear Power Plants
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[1] Federico Faccio,et al. Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects , 1999 .
[2] H.J. Barnaby,et al. Total-Ionizing-Dose Effects in Modern CMOS Technologies , 2006, IEEE Transactions on Nuclear Science.
[3] Bin Li,et al. Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs , 2018, IEEE Transactions on Nuclear Science.
[4] Greg Allen,et al. Radiation Hardening of an SiGe BiCMOS Wilkinson ADC for Distributed Motor Controller Application , 2014, IEEE Transactions on Nuclear Science.
[5] Bedrich J. Hosticka,et al. A JFET-CMOS radiation-tolerant charge-sensitive preamplifier , 1990 .
[6] G. Cervelli,et al. Radiation-induced edge effects in deep submicron CMOS transistors , 2005, IEEE Transactions on Nuclear Science.
[7] H. Altomonte. Japan's Nuclear Disaster: Its Impact on Electric Power Generation Worldwide [In My View] , 2012, IEEE Power and Energy Magazine.
[8] Stilianos Siskos,et al. Advanced Low-Noise X-Ray Readout ASIC for Radiation Sensor Interfaces , 2008, IEEE Transactions on Circuits and Systems I: Regular Papers.
[9] A. Houdayer,et al. Radiation hardness of gallium nitride , 2002 .
[10] Zhong-Jian Chen,et al. Radiation detector readout circuit with two-stage charge sensitive amplifier , 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.
[11] J. S. Kauppila,et al. Radiation Hardening of Voltage References Using Chopper Stabilization , 2015, IEEE Transactions on Nuclear Science.
[12] Robert C. Baumann,et al. Determining the impact of alpha-particle-emitting contamination from the Fukushima Daiichi disaster on Japanese manufacturing sites , 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.
[13] Hee Chul Lee,et al. Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit , 2013, IEEE Transactions on Nuclear Science.
[14] Hee Chul Lee,et al. Total Ionizing Dose Effects on a 12-bit 40kS/s SAR ADC Designed With a Dummy Gate-Assisted n-MOSFET , 2017, IEEE Transactions on Nuclear Science.
[15] Myounggon Kang,et al. A Radiation-Hardened Instrumentation Amplifier for Sensor Readout Integrated Circuits in Nuclear Fusion Applications , 2018, Electronics.
[16] Davide Marano,et al. A new enhanced PSPICE implementation of the equivalent circuit model of SiPM detectors , 2015, 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS).
[17] E. E. King,et al. A TID and SEE Radiation-Hardened, Wideband, Low-Noise Amplifier , 2006, IEEE Transactions on Nuclear Science.
[18] P. Dodd,et al. Radiation effects in SOI technologies , 2003 .
[19] John D. Cressler,et al. Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems , 2014, IEEE Transactions on Device and Materials Reliability.
[20] R. Kluit,et al. A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 $\mu$m CMOS Technology , 2007, IEEE Transactions on Nuclear Science.
[21] R. Pease,et al. Total ionizing dose effects in bipolar devices and circuits , 2003 .