Growth of epitaxial silicon layers by vacuum evaporation: II. initial nucleation and growth

[1]  G. Booker,et al.  Growth of epitaxial silicon layers by vacuum evaporation , 1964 .

[2]  G. Schwuttke,et al.  Erratum: X‐Ray Analysis of Stacking Fault Structures in Epitaxially Grown Silicon , 1963 .

[3]  G. Booker,et al.  Vacuum evaporated silicon layers free from stacking faults , 1963 .

[4]  C. Moore,et al.  Structure Defects in Pyrolytic Silicon Epitaxial Films , 1963 .

[5]  L. J. Tummers,et al.  Evaporation-condensation method for making germanium layers for transistor purposes , 1963 .

[6]  A. P. Hale.  Preparation and evaluation of epitaxial silicon films prepared by vacuum evaporation , 1963 .

[7]  H. Queisser,et al.  STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON , 1963 .

[8]  A. Knopp.  Some Comments on Thermal Etching of Silicon Surfaces Treated in Sealed Quartz Tubes , 1963 .

[9]  R. Bicknell,et al.  Growth mechanism and defect structures in epitaxial silicon , 1962 .

[10]  R. Stickler,et al.  Crystallographic Imperfections in Epitaxially Grown Silicon , 1962 .

[11]  R. Stickler,et al.  Method of preparing Si and Ge specimens for examination by transmission electron microscopy , 1962 .

[12]  W. C. Dash.  A Method for Measuring the Thickness of Epitaxial Silicon Films , 1962 .

[13]  B. Unvala.  Epitaxial Growth of Silicon by Vacuum Evaporation , 1962, Nature.

[14]  J. J. Lander,et al.  Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon , 1962 .

[15]  H. Queisser,et al.  Stacking Faults in Epitaxial Silicon , 1962 .

[16]  J. G. Hoffman,et al.  Solid State Physics in Electronics and Telecommunications , 1962 .

[17]  F. Smits,et al.  Diffusion of Impurities into Evaporating Silicon , 1959 .

[18]  H. E. Farnsworth,et al.  Surface-structure and work-function determinations for Silicon crystals , 1959 .

[19]  C. Wagner,et al.  Passivity during the Oxidation of Silicon at Elevated Temperatures , 1958 .